Rapid growth of thin and flexible organic semiconductor single crystal Anthracene by solution growth technique for device fabrication

Thirupugalmani, K.; Shanmugam, Ganesh; Kannan, V.; Brahadeeswaran, S.

doi:10.1016/j.jcrysgro.2014.12.009

Cited by 6 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Specifically, the growth time can be shortened from 20 h to 10 s when the temperature increases from 200 to 450 °C, which is much shorter than that the reported. [26,[33][34] Then, we explored the required growth time under different longitudinal pressures at 350 °C (Figure 1e). We found that the growth time decreases with the increased longitudinal pressures at 350 °C.…”

Section: Growth Process and Mechanism Of Osscs By Spatial Confinement...mentioning

confidence: 99%

General Spatial Confinement Recrystallization Method for Rapid Preparation of Thickness‐Controllable and Uniform Organic Semiconductor Single Crystals

Sun

Wang

et al. 2023

Small

View full text Add to dashboard Cite

Organic semiconductor single crystals (OSSCs) are ideal materials for studying the intrinsic properties of organic semiconductors (OSCs) and constructing high‐performance organic field‐effect transistors (OFETs). However, there is no general method to rapidly prepare thickness‐controllable and uniform single crystals for various OSCs. Here, inspired by the recrystallization (a spontaneous morphological instability phenomenon) of polycrystalline films, a spatial confinement recrystallization (SCR) method is developed to rapidly (even at several second timescales) grow thickness‐controllable and uniform OSSCs in a well‐controlled way by applying longitudinal pressure to tailor the growth direction of grains in OSCs polycrystalline films. The relationship between growth parameters including the growth time, temperature, longitudinal pressure, and thickness is comprehensively investigated. Remarkably, this method is applicable for various OSCs including insoluble and soluble small molecules and polymers, and can realize the high‐quality crystal array growth. The corresponding 50 dinaphtho[2,3‐b:2″,3″‐f]thieno[3,2‐b]thiophene (DNTT) single crystals coplanar OFETs prepared by the same batch have the mobility of 4.1 ± 0.4 cm2 V−1 s−1, showing excellent uniformity. The overall performance of the method is superior to the reported methods in term of growth rate, generality, thickness controllability, and uniformity, indicating its broad application prospects in organic electronic and optoelectronic devices.

show abstract

Section: Growth Process and Mechanism Of Osscs By Spatial Confinement...mentioning

confidence: 99%

General Spatial Confinement Recrystallization Method for Rapid Preparation of Thickness‐Controllable and Uniform Organic Semiconductor Single Crystals

Sun

Wang

et al. 2023

Small

View full text Add to dashboard Cite

show abstract

“…Besides, the anthracene carboxamides have excellent cell membrane permeability and good photo‐bleaching resistance in living cells, could serve as promising candidates for bio‐labeling/imaging applications . Additionally, anthracene single crystals can act as the organic semiconductor materials, which could be obtained by vapor crystallization, zone‐refining, or by solvent process …”

Section: Introductionmentioning

confidence: 99%

Determination of crystalline thermodynamics and behavior of anthracene in different solvents

Ding

Nimmo

et al. 2018

AIChE Journal

View full text Add to dashboard Cite

To screen suitable solvents for anthracene crystallization, the solubilities of anthracene and metastable zone width were determined in four different solvents, N,N-dimethyl formamide (DMF), xylene, tetrachloroethylene, and diethylene glycol dimethyl ether from 30 to 80 8C at atmospheric pressure using a self-made crystallizer. The cooling modes, solvents, and the effects of carbazole on the solvent crystallization process of anthracene were also investigated. The composition of mother liquors and solid products were measured by gas chromatography; the solids were analyzed by scanning electron microscope, X-ray diffractometer, differential scanning calorimetry, granulometer, and fluorescence spectrometer. The results showed that a uniform anthracene crystal was obtained when using DMF under the forced circulation cooling mode. Solid solution of anthracene and carbazole was initially detected in solvent crystallization. The existence of carbazole in solution has an obvious effect on the crystal morphology of anthracene, to some extent, is beneficial to the crystal growth of anthracene.The solvent cooling crystallization of anthracene with carbazole as the impurity was investigated with DMF as the solvent. Here, the adding ratios of carbazole varied from 1 to 30 Figure 3. Metastable zone of anthracene in DMF, TCE, xylene, and DGDE.Figure 9. Fluorescence spectrum of crystals of anthracene, carbazole, mechanical mixture, and cocrystals with the excitation wavelength of 356 nm.

show abstract

Results and analysis of changes in structural, Raman and luminescence properties in anthracene crystals by divalent metal ions doping

Kumar,

Sinha,

Kumar

2024

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Rapid growth of thin and flexible organic semiconductor single crystal Anthracene by solution growth technique for device fabrication

Cited by 6 publications

References 9 publications

General Spatial Confinement Recrystallization Method for Rapid Preparation of Thickness‐Controllable and Uniform Organic Semiconductor Single Crystals

General Spatial Confinement Recrystallization Method for Rapid Preparation of Thickness‐Controllable and Uniform Organic Semiconductor Single Crystals

Determination of crystalline thermodynamics and behavior of anthracene in different solvents

Results and analysis of changes in structural, Raman and luminescence properties in anthracene crystals by divalent metal ions doping

Contact Info

Product

Resources

About