Rapid fabrication of Cu/40-μm thick full Cu3Sn/Cu joints by applying pulsed high frequency electromagnetic field for high power electronics

Liu, Wei; Wen, Zhicheng; Xu, Jiahui; Wang, Xinming; An, Rong; Wang, Chunqing; Zheng, Zhen; Zhang, Wei; Tian, Yanhong

doi:10.1016/j.matchemphys.2021.125386

Cited by 3 publications

(1 citation statement)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In flip chip technology, the reduction of solder joint size and exponential increase in bump numbers has led to shrinkage of the process window and contributed to the difficulty of highly reliable welding [13]. Therefore, recent years have seen many publications concerning the process [14,15], materials [2,3], mechanism [9,16], reliability [3,17,18], testing [13,19] and other aspects of interconnect technologies.…”

Section: Introductionmentioning

confidence: 99%

Improvement of PbSn Solder Reliability with Ge Microalloying-Induced Optimization of Intermetallic Compounds Growth

Qu,

Hao,

Chen

et al. 2024

Materials

View full text Add to dashboard Cite

PbSn solders are used in semiconductor devices for aerospace or military purposes with high levels of reliability requirements. Microalloying has been widely adopted to improve the reliability for Pb-free solders, but its application in PbSn solders is scarce. In this article, the optimization of PbSn solder reliability with Ge microalloying was investigated using both experimental and calculation methods. Intermetallic compounds (IMC) growth and morphologies evolution during reliability tests were considered to be the main factors of device failure. Through first-principle calculation, the growth mechanism of interfacial Ni3Sn4 was discussed, including the formation of vacancies, the Ni-vacancies exchange diffusion and the dominant Ni diffusion along the [1 0 0] direction. The doping of Ge in the cell increased the exchange energy barrier and thus inhibited the IMC development and coarsening trend. In three reliability tests, only 0.013 wt% Ge microalloying in Pb60Sn40 was able to reduce IMC thickness by an increment of 22.6~38.7%. The proposed Ge microalloying method in traditional PbSn solder could yield a prospective candidate for highly reliable applications.

show abstract