Rapid electron-beam isothermal processing of arsenic-implanted NMOS devices

McMahon, R.A.; Ahmed, H.; Godfrey, D. J.; Kevin, Y.

doi:10.1109/t-ed.1983.21336

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Rta and Mos Device Quality1

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1985

1989

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Cited by 9 publications

(1 citation statement)

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“…Speight et a1 and McMahon er al [4,5] reported a small negative shift in the threshold voltages ( V , ) of e-beam annealed polysilicon MOSFETS, but only for the e-beam incident on the wafer front. Some oxide damage was found in aluminium gate capacitors, but this damage was annealed with a post-metallisation anneal at 350 "C.…”

Section: Rta and Mos Device Qualitymentioning

confidence: 99%

Noise and electrical characterisation of e-beam rapid isothermally annealed n-channel MOSFETS

Murray

Evans

Altrip

et al. 1989

Semicond. Sci. Technol.

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The low-frequency noise of rapid thermally annealed (RTA) n-channel MOSFETS has been studied and compared with furnace annealed devices. The RTA devices exhibited higher noise ( u p to an order of magnitude in €"l. The increase in interface ( l / f ) noise was thought to be related to the fast cooling rates, associated with RTA. Further, a significant contribution of G-R noise, due to bulk defects, was found for short RTA cycles. Measurements on RI A samples have also shown a deterioration of device performance, with respect to channel interface state density and threshold voltage.

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Section: Rta and Mos Device Qualitymentioning

confidence: 99%