Rapid combustion synthesis of Cu2Y2O5 as a precursor for CuYO2 delafossite

Racu, Andrei; Baies, Radu; Popuri, Srinivasa R.; Pascariu, Mihai-Cosmin; Niculescu, Mircea; Bănică, Radu

doi:10.1016/j.mtcomm.2018.01.010

Cited by 5 publications

(4 citation statements)

References 27 publications

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“…The crystal structure of the Y 2 Cu 2 O 5 material is illustrated in the inset of Figure a, in which a Cu 2 O 5 dimer, constituted by two distorted CuO 4 planar quadrilateral units, is connected to a distorted YO 6 octahedron. Furthermore, the Raman spectroscopy pattern of the material (Figure b) revealed characteristic Y 2 Cu 2 O 5 signals, consistent with previously reported literature . The result was consistent with the HRTEM images and provided additional evidence of the high phase purity of the synthesized material.…”

Section: Resultssupporting

confidence: 90%

“…Lattice fringes with a crystal plane spacing of 0.323 nm, corresponding to Y 2 Cu 2 O 5 (111) planes, were observed in high-resolution transmission electron microscopy (HRTEM) images (Figure 1g,h). In addition, a set of the high index diffraction spots was displayed in a fast 51 The result was consistent with the HRTEM images and provided additional evidence of the high phase purity of the synthesized material.…”

Section: ■ Introductionsupporting

confidence: 76%

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Bimetallic Oxide of Y₂Cu₂O₅ for Electroreduction of CO₂ to Syngas

Wu,

Liu,

et al. 2024

Energy Fuels

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The incorporation of guest elements into Cu-based bimetallic oxides has been proven as an effective way to modify the electronic structure and reactivity of Cu active sites. Here, the Y element was chosen as the guest element to modulate the electronic structure of Cu and alter its performance for electrochemical CO 2 reduction reaction (CO 2 RR). Y 2 Cu 2 O 5 , a high-crystallinity Cu-based bimetallic oxide, was synthesized via the sol−gel method. For pure-phase CuO and Y 2 O 3 controls, the selectivity of H 2 significantly exceeded that of CO. While Y and Cu combined in equal molar weights to form Y 2 Cu 2 O 5 , a notable enhancement in the CO selectivity was observed, resulting in a CO/H 2 ratio of approximately 1:1. These results prove that under the influence of Y, the electronic structure of Cu exhibits heightened CO selectivity. When the electrolyte solution was substituted with 1 M KOH, the CO/H 2 ratio achieved was about 2:1, indicating that the ratio of syngas can be adjusted by changing the concentration or type of electrolyte. This study explores the electronic modulation of a guest element in Cu-based bimetallic oxides and clarifies the beneficial influence of the Y element on the activity of Cu sites, which provides a novel approach for designing and regulating the activity of catalyst active sites.

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Section: Resultssupporting

confidence: 90%

Section: ■ Introductionsupporting

confidence: 76%

Bimetallic Oxide of Y₂Cu₂O₅ for Electroreduction of CO₂ to Syngas

Wu,

Liu,

et al. 2024

Energy Fuels

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“…As observed in the 1D‐XRD pattern of solid deposited pure CuO, the only one sharp peak was observed depicting the preferred

\overset{2}{true}

02 orientation at the surface, JCPDS reference code: 01‐080‐1916 . Yttrium doped copper oxide films showed CuO peaks as well as new peaks of Cu 2 Y 2 O 5 that were well matched with ICDD file 01‐83‐0341 . Crystallite sizes were calculated using Debye‐Scherrer formula for every peak while using 2θ° values and full width half maxima (FWHM) and are given in Table .…”

Section: Resultsmentioning

confidence: 76%

“…Yttrium addition is broadening the band gap of CuO which can be interrelated to the formation of Cu 2 Y 2 O 5 inside the lattice of CuO. Band gap of Cu 2 Y 2 O 5 is 2.58 eV for ∼200 nm grains, which are mixture of Y 2 O 3 and CuYO 2 crystals . As, the grain size of the deposited yttrium doped copper oxide is much smaller (average <50 nm), the band gap of CuO−Cu 2 Y 2 O 5 structure is larger as compared to reported values for CuO and Cu 2 Y 2 O 5 separately …”

Section: Resultsmentioning

confidence: 81%

Yttrium Doped Copper (II) Oxide Hole Transport Material as Efficient Thin Film Transistor

et al. 2020

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This work reports development of yttrium doped copper oxide (YÀ CuO) as a new hole transport material with supplemented optoelectronic character. The pure and Y-doped CuO thin films are developed through a solid-state method at 200°C and recognized as high performance p-channel inorganic thin-film transistors (TFTs). CuO is formed by oxidative decomposition of copper acetylacetonate, yielding 100 nm thick and conductive (40.9 S cm À 1 ) compact films with a band gap of 2.47 eV and charge carrier density of~1.44 × 10 19 cm À 3 . Yttrium doping generates denser films, Cu 2 Y 2 O 5 phase in the lattice, with a wide band gap of 2.63 eV. The electrical conductivity increases nine-fold on 2 % Y addition to CuO, and the carrier density increases to 2.97 × 10 21 cm À 3 , the highest reported so far. The TFT devices perform remarkably with high field-effect mobility (μ sat ) of 3.45 cm 2 V À 1 s À 1 and 5.3 cm 2 V À 1 s À 1 , and considerably high current-on/off ratios of 0.11 × 10 4 and 9.21 × 10 4 , for CuO and YÀ CuO films, respectively (at À 1 V operating voltage). A very small width hysteresis, 0.01 V for CuO and 1.92 V for 1 % YÀ CuO, depict good bias stability. Both the devices work in enhancement mode with stable output characteristics for multiple forward sweeps (5 to À 60 V) at À 1V g .

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