Range parameters of protons in silicon implanted at energies from 0.5 to 300 keV

Demond, F.J.; Kalbitzer, S.; Mannsperger, H.; Müller, Gerhard

doi:10.1016/0029-554x(80)91233-1

Cited by 31 publications

(7 citation statements)

References 11 publications

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“…5 ) . An indication of the plateau for H+ ions was pointed out in [4]. The theoretical calculations [B, 71 compared to our data agree worse with the experimental data which is caused by the usage of the T-F potential.…”

Section: (1)contrasting

confidence: 70%

“…4. The experiment [4] gives nearly constant and small absolute values of skewness and kurtosis. The calculated values differ considerably from the experimental ones, although on the whole our data agree better with the experiment.…”

Section: (1)mentioning

confidence: 88%

“…The calculated values differ considerably from the experimental ones, although on the whole our data agree better with the experiment. The main reason of this discrepancy is the great errors arising in the calculations of the moments, but significant uncertainties arise also in the experiment as noted in [4].…”

Section: (1)mentioning

confidence: 99%

“…For higher energies the only experiment [5] is known, where the mean projected ranges for H+ ions with energy 0.8 to 2 MeV were determined. Quite recently the energy range up to 10 keV was reinvestigated in [4]. Really there are no experimental data on helium ion range distributions in silicon.…”

Section: Introductionmentioning

confidence: 99%

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Range distribution characteristics of H+ and He++ ions with energies (5 to 2) × 103 keV implanted into silicon

Akkerman¹,

Akkerman²

1981

Phys. Stat. Sol. (a)

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Section: (1)contrasting

confidence: 70%

Section: (1)mentioning

confidence: 88%

Section: (1)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Range distribution characteristics of H+ and He++ ions with energies (5 to 2) × 103 keV implanted into silicon

Akkerman¹,

Akkerman²

1981

Phys. Stat. Sol. (a)

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“…[26] Figure 2, based on the data in Figure 4a of Demond et al [1980], shows the range in silicon in mm as a function of hydrogen speed in km s À1 . It is not anticipated that there is any substantial difference in the data between hydrogen and proton penetration.…”

Section: ''Visible'' Light-scattering Dust Modelmentioning

confidence: 99%

Neutral solar wind generated by lunar exospheric dust at the terminator

Collier

Stubbs

2009

J. Geophys. Res.

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[1] We calculate the flux of neutral solar wind observed on the lunar surface at the terminator due to solar wind protons penetrating exospheric dust grains with (1) radii greater than 0.1 mm and (2) radii greater than 0.01 mm. For grains with radii larger than 0.1 mm, the ratio of the neutral solar wind flux produced by exospheric dust to the incident ionized solar wind flux is estimated to be $10 À4 -10 À3 for solar wind speeds in excess of 800 km s À1 but much lower (<10 À5 ) at average to slow solar wind speeds. However, when the smaller grain sizes are considered, this ratio is estimated to be !10 À5 at all speeds and at speeds in excess of 700 km s À1 reaches $10 À3 . These neutral solar wind fluxes are easily measurable with current low-energy neutral atom instrumentation. Observations of neutral solar wind from the surface of the Moon would provide independent information on the distribution of very small dust grains in the lunar exosphere that would complement and constrain optical measurements at ultraviolet and visible wavelengths.Citation: Collier, M. R., and T. J. Stubbs (2009), Neutral solar wind generated by lunar exospheric dust at the terminator, J. Geophys.

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Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

et al. 1989

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Range parameters of protons in silicon implanted at energies from 0.5 to 300 keV

Cited by 31 publications

References 11 publications

Range distribution characteristics of H+ and He++ ions with energies (5 to 2) × 103 keV implanted into silicon

Range distribution characteristics of H+ and He++ ions with energies (5 to 2) × 103 keV implanted into silicon

Neutral solar wind generated by lunar exospheric dust at the terminator

Boron neutralization and hydrogen diffusion in silicon subjected to low-energy hydrogen implantation

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