1980
DOI: 10.1002/pssa.2210570219
|View full text |Cite
|
Sign up to set email alerts
|

Range and range straggling of ion-implanted boron in Cd0.2Hg0.8Te

Abstract: Calculations of range and range straggling of boron in Cd0.2Hg0.8Te are performed and compared with experimental range data obtained using the 10B(n, α)7Li nuclear reaction. The theoretical and experimental results agree reasonably with respect to range but disagree up to 48% with respect to range straggling.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

1981
1981
2018
2018

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 11 publications
(1 citation statement)
references
References 7 publications
0
1
0
Order By: Relevance
“…Boron profiles by NDP in mercury cadmium telluride, an infrared detector material, have been measured by Ryssel et al [ 45 ], Vodopyanov et al [ 46 ], and Bowman [ 47 ]. Cervena et al [ 30 ] have used NDP to study the implantation profiles of 10 B in several photoresists used in masking operations and to determine range values for implants in several types of grown or deposited SiO 2 films.…”
Section: Applicationsmentioning
confidence: 99%
“…Boron profiles by NDP in mercury cadmium telluride, an infrared detector material, have been measured by Ryssel et al [ 45 ], Vodopyanov et al [ 46 ], and Bowman [ 47 ]. Cervena et al [ 30 ] have used NDP to study the implantation profiles of 10 B in several photoresists used in masking operations and to determine range values for implants in several types of grown or deposited SiO 2 films.…”
Section: Applicationsmentioning
confidence: 99%