Raman study of V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by MOCVD

Sayari, A.; Yahyaoui, N.; Oueslati, M.; Maâref, H.; Zellama, K.

doi:10.1002/jrs.2224

Cited by 10 publications

(8 citation statements)

References 31 publications

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“…Solozhenko et al [204] present the first-and second-order Raman spectra of B 6 O and their dependence on the wavelength of the excitation line from the IR to the DUV. Raman scattering and IR transmittance were used to investigate the room-temperature phonon spectra of the polycrystalline double perovskites Ba 3 In 2 UO 9 , Sr 3 In 2 UO 9 , Ba 3 In 2 WO 9 , and Sr 3 In 2 WO 9 in the work by Sliva et al [205] Sayari et al [206] present a Raman study of the V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by metalorganic chemical vapor deposition (MOCVD). Krishnakumar et al [207] have determined the crystal structure and the vibrational and optical spectra of the semiorganic nonlinear optical crystal Bi 3 [CS(NH 2 ) 2 ] 9 Cl 9 ·2H 2 O. Silva et al [205] used Raman scattering and IR transmittance techniques to investigate the room-temperature phonon spectra of the polycrystalline Ba 3 In 2 UO 9 , Sr 3 In 2 UO 9 , Ba 3 In 2 WO 9 , and Sr 3 In 2 WO 9 double perovskites.…”

Section: Other Crystalline Materialsmentioning

confidence: 99%

“…Krishnakumar et al [207] have determined the crystal structure and the vibrational and optical spectra of the semiorganic nonlinear optical crystal Bi 3 [CS(NH 2 ) 2 ] 9 Cl 9 ·2H 2 O. Silva et al [205] used Raman scattering and IR transmittance techniques to investigate the room-temperature phonon spectra of the polycrystalline Ba 3 In 2 UO 9 , Sr 3 In 2 UO 9 , Ba 3 In 2 WO 9 , and Sr 3 In 2 WO 9 double perovskites. Sayari et al [206] carried out a Raman study of the V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by MOCVD. Krishnakumar et al [207] determined the crystal structure, vibrational spectra, and optical spectra of the semiorganic nonlinear optical crystal Bi 3 [CS(NH 2 ) 2 ] 9 Cl 9 ·2H 2 O. Silva et al [208] have investigated the room-temperature Raman spectra of several rare-earth [RE(HCOO) 3 ; RE = La, Pr, Nd, Gd, Tb and Y] formates.…”

Section: Other Crystalline Materialsmentioning

confidence: 99%

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Recent advances in linear and nonlinear Raman spectroscopy. Part IV

Nafie

2010

J Raman Spectroscopy

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The purpose of the review is to provide a concise overview of recent advances in the broadly defined field of Raman spectroscopy as reflected in part by the many articles published each year in the Journal of Raman Spectroscopy (JRS) as well as in trends across all related journals publishing in this research area. Context for the review is provided by considering statistical data on citations for the Thompson Reuters ISI Web of Science by year and by subfield of Raman spectroscopy. Additional statistics of number of papers and posters presented by category at the XXII International Conference on Raman Spectroscopy (ICORS 2010) is also provided. Papers published in JRS in 2009, as reviewed here, reflect trends at the cutting edge of Raman spectroscopy which is expanding rapidly as a sensitive photonic probe of matter at the molecular level with an ever widening sphere of novel applications.

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Section: Other Crystalline Materialsmentioning

confidence: 99%

Section: Other Crystalline Materialsmentioning

confidence: 99%

Recent advances in linear and nonlinear Raman spectroscopy. Part IV

Nafie

2010

J Raman Spectroscopy

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“…However, the development of In x Al 1-x As on InP substrate with a sharp interface is difficult to achieve. 4,5) This is associated with the difficulty to control the composition of In x Al 1-x As by metal-organic chemical vapor deposition (MOCVD) because of the large difference in the distribution coefficient between In and Al. 3) Moreover, it is also known that the InAlAs layer has an alloy phase separation or phase ordering (i.e.…”

Section: Introductionmentioning

confidence: 99%

“…4) Besides optimizing the substrate orientation, it is also necessary to establish control and to understand the effect of the arsenic overpressure (V/III flux ratio with fixedflow group III sources) on the quality of the inverted interface (InP on InAlAs). 4,5,9) In this context, Sayari et al 5) carried out a Raman study of the V/III flux ratio effect in In x Al 1-x As/InP heterostructures. The study shows that the In x Al 1-x As layers grown on (100) Fe-doped InP are extremely sensitive to the V/III flux ratio.…”

Section: Introductionmentioning

confidence: 99%

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Smiri¹,

Saidi²,

Mlayah³

et al. 2020

Jpn. J. Appl. Phys.

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We report on combined photoluminescence (PL) and micro-Raman microscopy to study the effect of the V/III flux ratio on InAlAs ternary alloy grown on (311)A InP by metal-organic chemical vapor deposition. The PL of the type-II transition was studied in a wide range of temperatures (10–300 K) and excitation intensities. As the V/III flux ratio increased from 25 to 125, a redshift of the type-II transition was observed. Then, micro-Raman investigations showed the presence of an LO mode related to LO-like InAs in InAsP alloy at the inverted interface in our samples. Furthermore, we discuss the effect of laser excitation wavelength on the Raman spectrum. We also note that phonon peaks are very sensitive to different excitation sources (364 to 638 nm). At lower frequencies, disorder-activated longitudinal acoustic phonons are also observed, which consider the presence of potential fluctuations. This last generate the carrier’s localization, which confirmed by PL measurements. In all samples, a blueshift of the type-II transition is noted with increasing the excitation power, which may reflect the presence of carrier localization, whereas the temperature-dependent PL peak energy displayed unusual behavior, such as consecutive red–blue–redshift (S-shaped) behavior and an inverted N-shape in the full width at half maximum. These unusual behaviors are explained by carriers captured by localized recombination centers. Moreover, in the room temperature PL spectra two types of emission were detected at 1.3 and 1.55 μm.

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“…[7][8][9][10] In the case of AlInAs alloys, obtaining epitaxial layers with good structural, optical, and electrical quality is complicated, partially due to the difference in bond strength between In-As and Al-As, and partially due to carbon (C) and oxygen (O) contaminations. 11 The difficulties for the growth of GaInAs epilayers are associated with the inhibition of triethylgallium (TEGa) decomposition by indium (In), the spinodal decomposition, and the sensitivity of alloy composition to growth temperature. 4 Since some of these problems are directly related to the reactor type and the precursor source phase, several studies focused on the epitaxial growth of AlInAs and GaInAs on InP substrates using either vapor sources (e.g., MOCVD, CBE, and others) 4,12,13 or solid sources (e.g., MBE).…”

Section: Introductionmentioning

confidence: 99%

Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates

Diallo

Mbeunmi

El-Gahouchi

et al. 2019

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The quality and properties of epitaxial films are strongly determined by the reactor type and the precursor source phase. Such parameters can impose limitations in terms of background doping, interface sharpness, clustering, phase separation, and homogeneity. The authors have implemented a hybrid epitaxy technique that employs, simultaneously, vapor and solid sources as group III precursors. The system combines the high throughput and the versatility of gas sources as well as the high purity of solid sources. Using this technique, the authors successfully demonstrated epitaxial growth of Al 0.48 In 0.52 As and Ga 0.47 In 0.53 As layers on Fe-doped semi-insulating InP (001) substrates with interesting properties, compared with the epilayers grown by more standard techniques (chemical beam epitaxy, metal-organic chemical vapor deposition, and MBE). For AlInAs growth, trimethylindium and solid aluminum were used as In and Al precursors, respectively. In the case of GaInAs, triethylgallium and solid indium were used, respectively, as Ga and In precursors. Thermally cracked arsine (AsH 3) was used as an As (group V) precursor for both alloys. The AlInAs and GaInAs epilayers grown at a temperature of 500°C exhibited featureless surfaces with RMS roughness of 0.2 and 1 nm, respectively. Lattice mismatch is of 134 ppm, for AlInAs, and −96 ppm, for GaInAs, which were determined from high-resolution x-ray diffraction (HR-XRD) patterns and showed a large number of Pendellösung fringes, indicating a high crystalline quality. An FWHM of 18.5 arcs was obtained for GaInAs epilayers, while HR-XRD mapping of a full 2-in. wafer confirmed a viable lattice mismatch homogeneity (standard deviation of 0.026%) for as-grown layers. The authors observed room-temperature background doping values as low as 3 × 10 15 cm −3 , for AlInAs, and 1 × 10 15 cm −3 , for GaInAs. Analysis of the PL spectra at 20 K showed an FWHM of 8 meV, for AlInAs, and 9.7 meV, for GaInAs, demonstrating a very good optical quality of the epilayers. In addition, they have investigated the effects of the growth temperature and of the arsine pressure on epilayer properties. They also discuss the optimum conditions for the growth of high-quality Al 0.48 In 0.52 As and Ga 0.47 In 0.53 As layers on InP (001) substrates using this hybrid epitaxy technique.

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Raman study of V/III flux ratio effect in InP/InAlAs/InP heterostructures grown by MOCVD

Cited by 10 publications

References 31 publications

Recent advances in linear and nonlinear Raman spectroscopy. Part IV

Recent advances in linear and nonlinear Raman spectroscopy. Part IV

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Hybrid epitaxy technique for the growth of high-quality AlInAs and GaInAs layers on InP substrates

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