Abstract:The quality and properties of epitaxial films are strongly determined by the reactor type and the precursor source phase. Such parameters can impose limitations in terms of background doping, interface sharpness, clustering, phase separation, and homogeneity. The authors have implemented a hybrid epitaxy technique that employs, simultaneously, vapor and solid sources as group III precursors. The system combines the high throughput and the versatility of gas sources as well as the high purity of solid sources. … Show more
“…28 Aer introduction into the reactor chamber, an annealing under high vacuum conditions (∼10 −6 torr) is carried out to desorb the chemical passivation provided by HBr. 29 Ge and GaAs were grown in a hybrid VG Semicon V90F CBE/MBE reactor, 30,31 with a liquid nitrogen cryopanel and a thermocouple for growth temperature monitoring. The Ge MN was grown with a two-step growth with an in situ annealing in between, using the solid source of Ge with the K-cell heated at 1250 °C (∼10 −6 torr).…”
The Porous germanium Efficient Epitaxial LayEr Release (PEELER) process is introduced allowing the fabrication of wafer scale detachable monocrystalline Ge nanomembranes compatible with III–V material growth on porous Ge and substrate reuse.
“…28 Aer introduction into the reactor chamber, an annealing under high vacuum conditions (∼10 −6 torr) is carried out to desorb the chemical passivation provided by HBr. 29 Ge and GaAs were grown in a hybrid VG Semicon V90F CBE/MBE reactor, 30,31 with a liquid nitrogen cryopanel and a thermocouple for growth temperature monitoring. The Ge MN was grown with a two-step growth with an in situ annealing in between, using the solid source of Ge with the K-cell heated at 1250 °C (∼10 −6 torr).…”
The Porous germanium Efficient Epitaxial LayEr Release (PEELER) process is introduced allowing the fabrication of wafer scale detachable monocrystalline Ge nanomembranes compatible with III–V material growth on porous Ge and substrate reuse.
We demonstrate low noise random alloy (RA) Al0.85Ga0.15AsSb (hereafter AlGaAsSb) avalanche photodiodes (APDs) nearly lattice-matched to InP substrates. In contrast to digital alloy (DA), RAs are manufacturable due to the ease of growth. The 910 nm-thick RA AlGaAsSb was grown at a low temperature around 450 °C to mitigate phase separation by suppressing surface mobility of adatoms. The high quality of the RA AlGaAsSb material was verified by x-ray diffraction, Nomarski, and atomic force microscope images. Capacitance–voltage measurement found that the background doping concentration was 6–7 × 1014 cm−3, indicating very low impurity density in the RA AlGaAsSb material. Current–voltage measurements were carried out under dark condition and 455 nm laser illumination at room temperature. The breakdown occurs at −58 V. The dark current density at a gain of 10 was found to be 70 μA/cm2. This value is three orders of magnitude lower than previously reported DA AlAs0.56Sb0.44 APDs [Yi et al., Nat. Photonics 13, 683 (2019)], one order of magnitude lower than DA AlGaAsSb [Lee et al., Appl. Phys. Lett. 118, 081106 (2021)], and comparable to RA AlInAsSb APDs [Kodati et al., Appl. Phys. Lett. 118, 091101 (2021)]. In addition, the measured excess noise shows a low k (the ratio of impact ionization coefficients) of 0.01. These noise characteristics make the RA AlGaAsSb multiplier suitable for commercial applications, such as optical communication and LiDAR systems.
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