Raman study of photostructural changes in amorphous GexSb0.4−xS0.6

Kotsalas, I. P.; Papadimitriou, D.; Raptis, Constantine A.; Vlček, Miroslav; Frumar, M.

doi:10.1016/s0022-3093(97)00493-6

Cited by 54 publications

(30 citation statements)

References 17 publications

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“…6. Considering that the corner-sharing tetrahedral ͑CS-GeS 4 ͒ bonding is dominant in the Ge-rich Ge x Sb 40−x S 60 glasses, and bearing in mind results of the Raman spectroscopy, 44 we suppose that the main structural configurations involved in the mechanism of radiation-induced structural transformations ͑Fig. 6͒ are CS-GeS 4 tetrahedra and tetrahedral GeS 4/2 ͑or GeS 4 , for simplicity͒ and pyramidal SbS 3/2 ͑or SbS 3 ͒ units linked through Ge-S-Sb bridge.…”

Section: Discussionmentioning

confidence: 98%

Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

Kavetskyy¹,

Shpotyuk²,

Kaban³

et al. 2008

The Journal of Chemical Physics

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Atomic structures of Ge 25 Sb 15 S 60 and Ge 35 Sb 5 S 60 glasses are investigated in the ␥-irradiated and annealed after ␥-irradiation states by means of high-energy synchrotron x-ray diffraction technique. The first sharp diffraction peak ͑FSDP͒ is detected at around 1.1 Å −1 in the structure factors of both alloys studied. The FSDP position is found to be stable for radiation/annealing treatment of the samples, while the FSDP intensity shows some changes between ␥-irradiated and annealed states. The peaks in the pair distribution functions observed between 2 and 4 Å are related to the Ge-S, Ge-Sb, and Sb-Sb first neighbor correlations and Ge-Ge second neighbor correlations in the edge-shared GeS 4/2 tetrahedra, and S-S and/or Ge-Ge second neighbor correlations in the corner-shared GeS 4/2 tetrahedra. Three mechanisms of the radiation-/annealing-induced changes are discussed in the framework of coordination topological defect formation and bond-free solid angle concepts.

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Section: Discussionmentioning

confidence: 98%

Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

Kavetskyy¹,

Shpotyuk²,

Kaban³

et al. 2008

The Journal of Chemical Physics

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“…Amorphous films of germanium chalcogenides (Ge-S, Ge-Se, Ge-S-Se, Ge-Sb-S systems) as well as respective glasses possess a nano-heterogeneous structure [6,12,18,[21][22][23][24][25][26][27][28][29]. The basic elements of structural network in glasses and films with the germanium content above 25% are tetrahedrons GeS n Se 4-n (n = 0 -4).…”

Section: Resultsmentioning

confidence: 99%

“…However, the matrix of germanium chalcogenide glasses and films contains a considerable amount of structural fragments with homopolar bonds Ge-Ge, S-S and Se-Se . In these cases, germanium chalcogenide films contain a higher concentration of homopolar bonds [12,18,23]. When illuminating the films, there take place break and reswitch of Ge-Ge, S-S and Se-Se bonds and formation of the heteropolar ones Ge-S(Se) [12,15,16,23].…”

Section: Resultsmentioning

confidence: 99%

“…In these cases, germanium chalcogenide films contain a higher concentration of homopolar bonds [12,18,23]. When illuminating the films, there take place break and reswitch of Ge-Ge, S-S and Se-Se bonds and formation of the heteropolar ones Ge-S(Se) [12,15,16,23]. Photostructural transformations can be also promoted by such structural defects as over-coordinated and undercoordinated atoms of germanium and chalcogen.…”

Section: Resultsmentioning

confidence: 99%

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Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films

Рубіш¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The optical transmissions spectra of amorphous Ge-S-Se films of chemical compositions (GeS 2 ) 50 (GeSe 2 ) 50 and (GeS 3 ) 50 (GeSe 3 ) 50 , prepared by thermal evaporation, have been measured over the whole 400 to 800 nm spectral range. It has been ascertained that annealing of the films leads to the absorption edge shift into the short-wave spectral region. The values of pseudo-gap width E g and film refraction index n have been determined. Changes in optical properties of films are caused by structural transformations taking place in them under laser illumination and annealing.

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“…On the other hand, in the first approximation, the compactness  is also a measure of free volume of glass [29]. It is interesting to note that the compactness  for the Ge x As 40-x S 60 glasses has attained a minimum value at Z = 2.72 (see Fig.…”

Section: Discussionmentioning

confidence: 98%

Radiation/annealing-induced structural changes in GexAs40-xS60 glasses as revealed from high-energy synchrotron X-ray diffraction measurements

Kavetskyy¹

2012

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. Local atomic structure of Ge x As 40x S 60 glasses (x = 16, 24, 32, and 36) has been investigated in the -irradiated (2.41 MGy dose) and annealed after -irradiation states by using the high-energy synchrotron X-ray diffraction technique. The accumulated dose of 2.41 MGy is chosen to be close to the known in literature focal point (2.0 MGy) for the system tested, at which the -irradiation-induced optical (darkening) effect does not depend on the composition. It is established that the first sharp diffraction peak (FSDP) is located at around 1 Е 1 . 1  in the structure factors S(Q) of all the alloys studied. The FSDP position is found to be constant on radiation/annealing treatment, but the intensity of the FSDP reveals changes under irradiation/annealing only for the compositions with x = 16 and 24. The radiation/annealing-induced changes are also observed on the pair distribution functions in the first and second coordination shells for these compounds. Practically invisible effects on the FSDP and pair distribution functions are found for the alloys with x = 32 and 36. The radiation/annealing-induced structural changes detected mainly in the S As  sub-system of the glasses examined are well explainable within the Tanaka approach for interpretation of the photo-induced structural changes and related phenomena in As 2 S 3 chalcogenide glass and similar materials.

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Raman study of photostructural changes in amorphous GexSb0.4−xS0.6

Cited by 54 publications

References 17 publications

Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

Radiation-modified structure of Ge25Sb15S60 and Ge35Sb5S60 glasses

Photo- and thermally-induced changes in the optical properties of Ge-S-Se amorphous films

Radiation/annealing-induced structural changes in GexAs40-xS60 glasses as revealed from high-energy synchrotron X-ray diffraction measurements

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