Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices

Kim, Hyun-Tak; Chae, Byung-Gyu; Youn, Doo–Hyeb; Kim, Gyungock; Kang, Kwang‐Yong; Lee, Seung-Joon; Kim, Kwan; Lim, Young-Tae

doi:10.1063/1.1941478

Cited by 232 publications

(149 citation statements)

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“…In-plane results (Figure 6(c)) show large current jumps and the threshold voltage dependence on temperature in agreement with previous studies on VO 2 [20,21]. This demonstrates that VO 2 film on Nb:STO does show the electrically-driven transition.…”

Section: Resultssupporting

confidence: 80%

Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics

Cui

Wang

Zhou

et al. 2012

Journal of Crystal Growth

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We report on growth and physical properties of vanadium dioxide (VO 2 ) films on model conducting oxide underlayers (Nb-doped SrTiO 3 and RuO 2 buffered TiO 2 single crystals). The VO 2 films, synthesized by rf sputtering, are highly textured as seen from X-ray diffraction. The VO 2 film grown on Nb doped SrTiO 3 shows over two orders of magnitude metal-insulator transition, while VO 2 film on RuO 2 buffered TiO 2 shows a smaller resistance change but with an interesting two step transition. X-ray photoelectron spectroscopy has been performed as a function of depth on both sets of structures to provide mechanistic understanding of the transition characteristics. We then investigate voltage-driven transition in the VO 2 films grown on Nbdoped SrTiO 3 substrate as a function of temperature. The present study contributes to efforts towards correlated oxide electronics utilizing phase transitions.

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Section: Resultssupporting

confidence: 80%

Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics

Cui

Wang

Zhou

et al. 2012

Journal of Crystal Growth

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“…Moreover, Raman experiments [5] for a VO 2 film have showed monoclinic-insulator peaks after the film had undergone an electric-field-induced transition from an insulator to a metal. Furthermore, tetragonal-metal peaks have been associated with the structural phase transition (SPT) above 68…”

mentioning

confidence: 99%

Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor

Kim

Lee

Chae

et al. 2007

Applied Physics Letters

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185

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The temperature dependence of the Mott metal-insulator transition (MIT) is studied with a VO2-based two-terminal device. When a constant voltage is applied to the device, an abrupt current jump is observed with temperature. With increasing applied voltages, the transition temperature of the MIT current jump decreases. We find a monoclinic and electronically correlated metal (MCM) phase between the abrupt current jump and the structural phase transition (SPT). After the transition from insulator to metal, a linear increase in current (or conductivity) is shown with temperature until the current becomes a constant maximum value above TSP T ≈68• C. The SPT is confirmed by micro-Raman spectroscopy measurements. Optical microscopy analysis reveals the absence of the local current path in micro scale in the VO2 device. The current uniformly flows throughout the surface of the VO2 film when the MIT occurs. This device can be used as a programmable critical temperature sensor.PACS numbers: 71.27. +a, 71.30.+hThe first-order Mott discontinuous metal-insulator transition (MIT) has been studied as a function of temperature in numerous materials such as Ti 2 O 3 , V 2 O 3 , and VO 2 etc [1]. Almost all have a transition temperature, T MIT , below room temperature except VO 2 which has T MIT ≈68• C. In particular, VO 2 thin films were used for fabrication of two-and three-terminal devices controlled by an electric field [2]. A high-speed Mott switching device using an abrupt current jump as observed in I-V measurements was predicted for manufacturing in the nano-level transistor regime [3,4].Moreover, Raman experiments [5] for a VO 2 film have showed monoclinic-insulator peaks after the film had undergone an electric-field-induced transition from an insulator to a metal. Furthermore, tetragonal-metal peaks have been associated with the structural phase transition (SPT) above 68• C. Also no evidence of phonon softening near the transition temperature has been found by the temperature dependence of Raman spectra measured with a VO 2 single crystal and a thin film [6]. These results support the electron correlation model of the MIT. However, some reports argue that the electric field-induced MIT is due to Joule heating by current and is accompanied by SPT, and that, furthermore, the local current path or current filament formed by the dielectric breakdown [7] can also cause the jump (MIT). The dielectric breakdown was described by depinning and the collective transport of charge carriers above a threshold voltage. Here, we try to elucidate this ambiguity through the analysis of our present research.Another interesting aspect in VO 2 is that the T MIT can be modified by doping [8,9] and stress [10]. VO 2 thin films deposited on (001) and (110) TiO 2 substrates showed a modified T MIT of 27 and 96• C, respectively, where the c-axis length was stressed by a lattice mismatch between the film and the substrate [10]. The modification of the T MIT by doping and stress is restricted to within a fixed temperature, whereas the T MIT indu...

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“…In an ideal 3-terminal device, the sourcedrain current would be kept small and well below the value that can cause any heating of the VO 2 channel. The gate would induce a static transverse electric field in the VO 2 channel that exceeds typical critical electric fields (on the order of 3 x 10 6 V/m [11,12,15]) causing MIT in 2-terminal devices. If the leakage current through the gate insulator is negligible, then the strong transverse electric field should cause no heating and the presence of the MIT in VO 2 would be the proof of the electrostatic origin of the effect.…”

Section: Resultsmentioning

confidence: 99%

“…Recently however, other (non-thermal) causes of the voltage-triggered MIT were proposed [13][14][15]. Specifically, the electric field, rather than local dissipated power due to Joule heating, was suggested to be the origin of the MIT involving the Mott transition [6,14,15] or electrical breakdown [13].…”

Section: Introductionmentioning

confidence: 99%

Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Ruzmetov¹,

Gopalakrishnan²,

Ko³

et al. 2010

Journal of Applied Physics

148

114

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Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices

Cited by 232 publications

References 13 publications

Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics

Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics

Temperature dependence of the first-order metal-insulator transition in VO2 and programmable critical temperature sensor

Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

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