Synthesis of vanadium dioxide thin films on conducting oxides and metal–insulator transition characteristics

Abstract

We report on growth and physical properties of vanadium dioxide (VO 2 ) films on model conducting oxide underlayers (Nb-doped SrTiO 3 and RuO 2 buffered TiO 2 single crystals). The VO 2 films, synthesized by rf sputtering, are highly textured as seen from X-ray diffraction. The VO 2 film grown on Nb doped SrTiO 3 shows over two orders of magnitude metal-insulator transition, while VO 2 film on RuO 2 buffered TiO 2 shows a smaller resistance change but with an interesting two step transition. X-ray photoelectron spectroscopy has been performed as a function of depth on both sets of structures to provide mechanistic understanding of the transition characteristics. We then investigate voltage-driven transition in the VO 2 films grown on Nbdoped SrTiO 3 substrate as a function of temperature. The present study contributes to efforts towards correlated oxide electronics utilizing phase transitions.

Design of vanadium oxide structures with controllable electrical properties for energy applications

“…84 Precise control over the orientation of the vanadium dioxide nanowires is beginning to emerge at the current stage, however, further work is still needed to control the position and orientation for integrating the 1D nanowires into a designed system. Due to the heteroepitaxial interface between VO 2 (R) and the sapphire planes, 85 the single crystalline VO 2 nanowires could be epitaxially grown along the [100] direction with a unique growth orientation relationship with respect to the planes of the sapphire substrates. High structural correlations exist between the VO 2 (M) and the sapphire substrates, both of which have the close-packed arrangements of oxygen atoms for (010) VO 2 and (0001) sapphire.…”

Effect of substrate temperature on the structure and the metal insulator transition in pulsed laser deposed V02\ films on soda lime glass

“…As suggested from the XRD profile ( Fig. 1), there may be a diffusion of Na in to the VO 2 films [23] shows a T C of about 54.5  C. The low T C of VO 2 films indicates that the MIT upon cooling undergoes a significant lagging. In other words, as reported also by H. Zhang et al [24], the deposited films would require large additional driving forces in order to change from tetragonal to monoclinic phase.…”

Electrical Conductivity of Polymer Composite Pp-Vo2

“…Розробка стабільних об'ємних критичних терморезисторів на основі компонента з фазовим переходом метал-напівпровідник (ФПМН) важлива для ряду галузей електроніки та електротехніки, де плівкові структури не можуть бути використані через порівняно малі робочі струми [1,2]. Невирішеною до теперішнього часу проблемою технології терморезисторів, яка стримує їх виробництво і використання, є нестабільність параметрів матеріалу.…”