Raman studies of structural order in amorphous silicon-boron alloys

Yang, G.‐R.; Bai, P.; Tong, B. Y.; Wong, S. K.; Hill, Ian R.

doi:10.1016/0038-1098(89)90514-0

Cited by 16 publications

(12 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, the misfit is reduced within local B networks (clusters), so that the incremental increase in disorder is less severe than in the low B-content region. In this respect the present results accord with the previous Raman study [16]. The continued drop in activation energy as the boron content is increased to 50% is again consistent with the monotonic increase in local disorder seen previously [16].…”

Section: Discussionsupporting

confidence: 94%

“…In this respect the present results accord with the previous Raman study [16]. The continued drop in activation energy as the boron content is increased to 50% is again consistent with the monotonic increase in local disorder seen previously [16]. At some point the activation energy is expected to rise again, since a-B has been observed [15] to be less readily oxidized than the a-Si:B alloys.…”

Section: Discussionsupporting

confidence: 93%

“…The enhancement of oxidation rate by increasing boron content suggests applications in thin film transistors, bipolar devices, and MOS integrated circuit applications. Other film properties such as high and tailorable resistivity, high temperature stability, and high microhardness are consistent with this recommendation [11][12][13][14][15][16][17].…”

Section: Introductionsupporting

confidence: 77%

“…2 understand the enhancement of both structural stability and the ease of thermal oxidation by considering the level of strain grown into the continuous random network (CRN) as a result of the B inclusion. At low B contents, the local disorder has been observed [16] to increase quite rapidly with B%, due to the tetrahedral strain misfit of -0.25. This local disorder implies local strain.…”

Section: Discussionmentioning

confidence: 97%

“…Although this value is regularly exceeded under the nonequilibrium conditions of an amorphous alloy, previous work has suggested a limit of -3% for active, or four-coordinated, B incorporation [16]. Following saturation of active doping in the a-Si network, the network-forming element B is believed to take on its preferred three-coordination as it is distributed throughout the amorphous Si matrix [16].…”

Section: Discussionmentioning

confidence: 97%

See 4 more Smart Citations

Study of Oxidation Properties of Amorphous Si:B Films

Yang

Nason

et al. 1991

MRS Proc.

View full text Add to dashboard Cite

Thin films of an amorphous silicon-boron alloy with boron content 1 -50 at.% have been deposited by low pressure chemical vapor deposition (LPCVD). The boron content and film thickness of the samples were controlled by regulating the ratio of diborane and silane gases during the deposition. It was observed that the crystallization of the amorphous alloy took place at higher temperatures as boron concentration was increased. After a thermal oxidation was performed, the stoichiometry of the resulting oxide layers on various samples was determined by the secondary ion mass spectrometry and Auger depth profile methods. While the threshold temperature for thermal oxidation was determined to be inversely proportional to the boron concentration, the oxidation rate showed a dramatic increase with boron content. In particular, an alloy containing 30% boron was readily oxidized at 500 0 C. Mechanisms for the enhancement of oxidation consistent with stoichiometric and spectroscopic properties of the oxide layers are discussed.

show abstract

Section: Discussionsupporting

confidence: 94%

Section: Discussionsupporting

confidence: 93%

Section: Introductionsupporting

confidence: 77%

Section: Discussionmentioning

confidence: 97%

Section: Discussionmentioning

confidence: 97%

See 3 more Smart Citations

Study of Oxidation Properties of Amorphous Si:B Films

Yang

Nason

et al. 1991

MRS Proc.

View full text Add to dashboard Cite

show abstract

The Influence of B2H6 on the Growth of Silicon Nanowire

2005

View full text Add to dashboard Cite

The un-doped and boron-doped silicon nanowires (SiNWs) were grown via vapor-liquid-solid (VLS) mechanism by low pressure chemical deposition (LPCVD). The diameters of un-doped and boron-doped SiNWs varied from 18.5 to 75.3 nm and 26.6 to 66.1 nm, respectively. The critical growth temperature of boron-doped SiNWs is 10°C lower than that of un-doped ones and the diameters of the boron-doped SiNWs is always larger than that of the un-doped ones under different growth temperatures. This is because that the introduction of diborane enhanced the dissociation of SiH 4 which determines the growth process of SiNW. A growth process of silicon nanowire is proposed to describe the influence of B 2 H 6 .

show abstract