Deposition of boron doped a-Si:H films by a novel combination of rf glow discharge technique and filament heating: Enhancement of doping efficiency

Gas doping ratio effects on p-type hydrogenated nanocrystalline silicon thin films grown by hot-wire chemical vapor deposition

“…The 30-40% boron doing efficiency is about two times higher than the samples deposited by PECVD where the boron doping efficiency is only 10-20% [12]. The higher boron concentration and doping efficiency for the samples deposited by HWCVD other than PECVD may be due to (i) less hydrogen content for the samples with the same crystalline volume fraction [36] leading to higher possibility to put the boron atoms to their 4-fold co-ordinated state instead of forming the neutral B-H-Si complex, (ii) higher dissociation efficiency [37] and (iii) no B-C-H x groups when the diborane was used as doping gas instead of TMB [12].…”

Insights into the Nature of SiH4−BH3Complex: Theoretical Investigation of New Mechanistic Pathways Involving SiH3•and BH4•Radicals

“…65 Similar infrared absorption spectra for boron doped silicon films have been reported. 6,66,67 A sample of amorphous silicon film doped with boron shows absorption at two regions (1850∼2250 cm -1 ). 6 In these regions, both frequencies and intensities of the observed peaks are in good agreement with the corresponding calculated values of the complex SiH 4 -BH 3 .…”

“…6,66,67 A sample of amorphous silicon film doped with boron shows absorption at two regions (1850∼2250 cm -1 ). 6 In these regions, both frequencies and intensities of the observed peaks are in good agreement with the corresponding calculated values of the complex SiH 4 -BH 3 . This spectral feature appears at a higher frequency than the B-H-B stretch of B 2 H 6 .…”

“…These include decomposition temperature, concentration of source gas, substrate temperature, etc. 6,7 At lower temperatures, the decomposition of B 2 H 6 into BH 3 is more probable than the dissociation of either SiH 4 or H 2 because of the lower dissociation energy of B 2 H 6 . [18][19][20][21] Thus, the interaction of BH 3 with SiH 4 might have a significant role in the initial steps of the CVD mechanism.…”

Ab Initio and Topological Study of Interactions between SiH4-nXn(n= 0−3, X = F and Cl) and BH3

“…Silane and its halogen derivatives SiH 4 - n X n are widely used as source gases in CVD fabricating silicon films. − It has long been observed that B 2 H 6 , a p-type dopant, mixed with SiH 4 - n X n can catalyze the deposition. Boron doping efficiency and the rate of film deposition are greatly influenced by variation of the B 2 H 6 concentration and the species of SiH 4 - n X n . − Under CVD conditions, decomposition and recombination of source gas molecules may happen at several stages. The system is further complicated by surface absorption and desorption. − The actual experimental condition is thus crucial and can be adjusted to control dominant reactions at certain stage.…”