Raman-spectroscopy study of PbTiO3 thin films grown on Si substrates by metalorganic chemical vapor deposition

H., W.; Zhang, Mingsheng; Li, Shun; Zhang, Yin; Chen, Q.; Chen, Y. F.; Ming, Nai‐Ben

doi:10.1007/bf01575095

Cited by 8 publications

(3 citation statements)

References 13 publications

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“…Several deposition methods have been developed and used for preparing PT films, such as radio frequency sputtering [4], metalorganic chemical vapour deposition [5], pulsed laser deposition [6] and sol-gel [7,8]. Among these techniques, chemical methods have advantages over physical methods, such as sputtering, because they allow better stoichiometric control of the complex oxides.…”

Section: Introductionmentioning

confidence: 99%

Evaluating the residual stress in PbTiO₃thin films prepared by a polymeric chemical method

Valim¹,

Filho²,

Freire³

et al. 2004

J. Phys. D: Appl. Phys.

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We report a study of residual stress in PbTiO 3 (PT) thin films prepared on Si substrates by a polymeric chemical method. The E(1TO) frequency was used to evaluate the residual stress through an empirical equation available for bulk PT. We find that the residual stress in PT films increases as the film thickness decreases and conclude that it originates essentially from the contributions of extrinsic and intrinsic factors. Polarized Raman experiments showed that the PT films prepared by a polymeric chemical method are somewhat a-domain (polar axis c parallel to the substrate) oriented.

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Section: Introductionmentioning

confidence: 99%

Evaluating the residual stress in PbTiO₃thin films prepared by a polymeric chemical method

Valim¹,

Filho²,

Freire³

et al. 2004

J. Phys. D: Appl. Phys.

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“…The pronounced broadening of the 640 cm Ϫ1 line is not surprising, since this line is particularly sensitive to the microstructure. 15 The shift in the ferroelectric soft mode at 90 cm Ϫ1 towards lower wave number with increasing Si is usually an indication of the decrease in the ferroelectric T c . Such a decrease is also confirmed independently by DSC results.…”

Section: Discussionmentioning

confidence: 99%

Si induced size effects in ferroelectric PbTiO3

Palkar

Purandare

Ayyub

et al. 2000

Journal of Applied Physics

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Ferroelectric domain wall relaxation in Ba 0.25 Sr 0.75 Ti O 3 films displaying Curie-Weiss behavior Physical properties of PbTiO 3 in the presence of Si are investigated in detail. Polycrystalline bulk samples with nominal composition of (Pb 1Ϫx Si x ) (Ti 1Ϫx Si x )O 3 , where x varies from 0.01 to 0.25, are synthesized using the coprecipitation route. The presence of Si in the matrix leads to a reduction in coherently diffracting domain size (d XRD ). The observed reduction in the ferroelectric distortion in the lattice c/a, ferroelectric transition temperature T c and shift in Raman lines of PbTiO 3 with increase in Si content are attributed to the Si induced finite size effect. However, at higher calcination temperatures, the material exhibits properties similar to pure, undoped, bulk PbTiO 3 . There is no evidence of change in crystal structure and ferroelectric nature of PbTiO 3 due to the presence of Si. Our data suggests that Si, which is diffused out of PbTiO 3 perovskite lattice, is likely to reside in the grain boundary region in an as yet unidentified chemical form.

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“…9 Figure 4 compares the changes in the Raman spectra of pure PbTiO 3 due to La doping into its lattice. 9 Figure 4 compares the changes in the Raman spectra of pure PbTiO 3 due to La doping into its lattice.…”

Section: Raman Measurementsmentioning

confidence: 99%

Pyroelectric characteristics of thin PbTiO3 and la-modified PbTiO3 films on platinum films for infrared sensors

Deb

Tamagawa

et al. 2001

Journal of Elec Materi

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Raman-spectroscopy study of PbTiO3 thin films grown on Si substrates by metalorganic chemical vapor deposition

Cited by 8 publications

References 13 publications

Evaluating the residual stress in PbTiO₃thin films prepared by a polymeric chemical method

Evaluating the residual stress in PbTiO₃thin films prepared by a polymeric chemical method

Si induced size effects in ferroelectric PbTiO3

Pyroelectric characteristics of thin PbTiO3 and la-modified PbTiO3 films on platinum films for infrared sensors

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Raman-spectroscopy study of PbTiO3 thin films grown on Si substrates by metalorganic chemical vapor deposition

Cited by 8 publications

References 13 publications

Evaluating the residual stress in PbTiO3thin films prepared by a polymeric chemical method

Evaluating the residual stress in PbTiO3thin films prepared by a polymeric chemical method

Si induced size effects in ferroelectric PbTiO3

Pyroelectric characteristics of thin PbTiO3 and la-modified PbTiO3 films on platinum films for infrared sensors

Contact Info

Product

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Evaluating the residual stress in PbTiO₃thin films prepared by a polymeric chemical method

Evaluating the residual stress in PbTiO₃thin films prepared by a polymeric chemical method