Si induced size effects in ferroelectric PbTiO3

Palkar, V. R.; Purandare, S. C.; Ayyub, Pushan; Pinto, R.

doi:10.1063/1.371884

Cited by 13 publications

(6 citation statements)

References 14 publications

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“…1-3 Lead titanate (PbTiO 3 ) based materials are used in a wide range of electronic devices, e.g., transducers, infrared detectors, ferroelectric memories, etc. 4,5 In addition, thin films of solid solutions of PbTiO 3 with other perovskite compounds exhibit an enhancement in various interesting properties and are, thus, feasible to be used in several devices. With the addition of strontium to PbTiO 3 , the phasetransition temperature decreases with the increasing strontium concentration.…”

Section: Introductionmentioning

confidence: 99%

Investigation of phase transition in ferroelectric Pb0.70Sr0.30TiO3 thin films

Leal

Leite

Longo

et al. 2004

Journal of Applied Physics

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We have carried out dielectric and Raman spectroscopy studies at the 298 -623 K temperature range in polycrystalline Pb 0.70 Sr 0.30 TiO 3 thin films grown by a soft chemical method. The diffuse phase-transition behavior of the thin films was observed by means of the dielectric constant versus temperature curves, which show a broad peak. Such behavior was confirmed later by Raman spectroscopy measurements up to 823 K, indicating that a diffuselike phase transition takes place at around 548 -573 K. The damping factor of the E(1TO) soft mode was calculated using the damped simple harmonic oscillator model. On the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of a breakdown of the microscopic local cubic symmetry by chemical disorder. The lack of a well-defined transition temperature and the presence of broad bands at some temperature interval above the ferroelectric-paraelectric phase-transition temperature suggested a diffuse nature of the phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in this thin film.

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Section: Introductionmentioning

confidence: 99%

Investigation of phase transition in ferroelectric Pb0.70Sr0.30TiO3 thin films

Leal

Leite

Longo

et al. 2004

Journal of Applied Physics

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“…These phenomena are similar to finite size effects induced by Si in PbTiO 3 . 9 With this in mind, a sample with 0.7% Sb doping was annealed at various temperatures to obtain different grain sizes. When the sample was annealed at 680°C for 1 h, the grain size was as large as 80 nm.…”

Section: Experimental and Resultsmentioning

confidence: 99%

Sb‐induced size effects in ZnO nanocrystallites

Zuo

Zhang

et al. 2001

J Raman Spectroscopy

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Sb-doped ZnO nanocrystallites of average grain size about 10 nm were made by using the citrate method. Raman spectra of the Sb-doped ZnO nanocrystallites at room temperature are reported. Shifts and broadening of the Raman peak with Sb increasing content were observed and it was found that the intensity of a new Raman peak increased at the same time. These effects are similar to finite size effects in ZnO nanocrystallites. It was found for the first time that the size effects are induced by the presence of Sb in the matrix.

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“…28,29 On the other hand, dielectric constant is expected to increase and then decrease with increase in grain size. 30 however, may not restrict applications-as appropriate mechanical or laser scribing 23 may be used effectively for domain refining. Since ferroelectric materials are associated with an axis of easy polarization, it is expected to have higher dielectric constant, when measured in this direction.…”

Section: Introductionmentioning

confidence: 99%