Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

Cheetham, Kieran J.; Carrington, Peter J.; Krier, A.; Patel, Imran; Martin, Francis

doi:10.1088/0268-1242/27/1/015004

Cited by 14 publications

(6 citation statements)

References 23 publications

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“…The formation of InAs was probed with time-dependent Raman spectra collected during the course of several potential step experiments. For analysis of a thin film on a thick substrate, the measured Raman intensity for the thin film reports on the film thickness when the Raman probe depth extends well beyond the thin film, − that is, the measured Raman signal is a linear descriptor of InAs film thickness. Figure a–c shows the time-dependent Raman spectra for three potential-step experiments conducted at room temperature with 0.01 M As 2 O 3 and E app = −1.25, −1.30, and −1.35 V, respectively.…”

Section: Resultsmentioning

confidence: 99%

Electrochemically Gated Alloy Formation of Crystalline InAs Thin Films at Room Temperature in Aqueous Electrolytes

Fahrenkrug

Maldonado

2014

Chem. Mater.

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Crystalline InAs films have been prepared directly at room temperature through a new electrochemically induced alloying method by controllably reducing As 2 O 3 dissolved in an alkaline aqueous solution at an indium (In) foil electrode. Steady-state Raman spectra, transmission electron microscopy, and selected area electron diffraction indicated that the as-prepared films crystallize in the zincblende phase with no further thermal treatments. Cyclic voltammetry measurements, optical images, and steady-state Raman spectra confirmed that a clean oxide-free interface is critical for the successful formation of the binary InAs phase. The salient feature of this work is the use of simple aqueous electrochemistry to simultaneously remove passive metal oxides from the In(s) metal surface while controllably reducing dissolved arsenic oxide at the interface to drive the In−As alloying reaction. Raman spectral mapping data illustrate that the resulting film coverage and homogeneity are a strong function of the formal As 2 O 3 concentration and the duration of the electrodeposition experiment. Potential-dependent in situ Raman spectroscopy was used to implicate the solid-state reaction as the rate-limiting step in InAs film formation over the first 160 min, after which solid-state diffusion dominated the kinetics. The collective results establish a precedent for an alternative synthetic strategy for crystalline InAs thin films that does not require vacuum or sophisticated furnaces, toxic gaseous precursors like arsine, or exotic solvents. ■ INTRODUCTIONLarge-scale production of crystalline thin films of III−V semiconductors is challenging in two ways. First, the majority of synthetic methods are energy-and resource-intensive. 1−3 For example, vapor-phase crystal growth techniques such as metal− organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) involve ultrahigh vacuum (UHV) equipment and temperatures above 400°C. 1,3 Similarly, liquid-phase epitaxy requires sustained temperatures in excess of 750°C and pressurized furnaces. 2 Second, these same fabrication methods can be difficult to incorporate directly into device fabrication processes. For example, the high temperatures and corrosive reagents used in liquid phase epitaxy (LPE), MOCVD, and MBE can damage delicate electronic device architectures [e.g., complementary metal-oxide-semiconductor (CMOS)] and sensitive platforms (e.g., plastics). As a result, cumbersome and costly transfer and integration steps are necessary. 4 An ongoing frontier in materials science is thus the discovery and development of synthetic strategies for III−V semiconductors that mitigate these aforementioned challenges while not sacrificing crystalline quality, material purity, process controllability, and reproducibility. In this vein, gas-phase 5,6 and solution-phase 7 conversions of metals into compound semiconductors have been studied as possible synthetic alternatives. 5−7 These methods offer the potential for fewer fabrication steps and potentially simpler device integration...

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Section: Resultsmentioning

confidence: 99%

Electrochemically Gated Alloy Formation of Crystalline InAs Thin Films at Room Temperature in Aqueous Electrolytes

Fahrenkrug

Maldonado

2014

Chem. Mater.

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“…The phonon peaks that are decreasing with reaction time are attributed to GaSb and those appearing with reaction time to InAsSb. The signature at 140 cm -1 is attributed to a disorder-activated longitudinal acoustic (DALA) phonon of the InAsSb-layer [39]. The peak at 1783 cm -1 is attributed to a phononplasmon coupled mode where the plasmon is due to the Si-doping of the InAsSb layer [50].…”

Section: Raman Spectroscopy To Trace Materials Transition Of Gasb In Wmentioning

confidence: 99%

“…The reaction of the GaSb with water over a period of 14 h is investigated by Raman spectroscopy, energy-dispersive x-ray spectroscopy (EDS), conductive atomic force microscopy and reflectometry in the visible and infrared spectral range. Electro-optical parameters of GaSb and InAsSb, [38,39], spectral ellipsometrically determined constants of GaSb [40] and its anodically grown oxide [41,42], as well as the electrooptical constants of gallium oxides [43][44][45] and of antimony oxide [46,47] allow us to assess the product of the GaSb oxidation in water. In particular, we report a refractive index of n=1.6±0.1 for the oxide, which is closer to the reported value of n=1.68 for GaO x [44] than the value reported for anodically grown GaSb oxide (n=2.0).…”

Section: Introductionmentioning

confidence: 99%

Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water

Bomers

Paola

Cerutti

et al. 2018

Semicond. Sci. Technol.

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The oxidation of GaSb in aqueous environments has gained interest by the advent of plasmonic antimonide-based compound semiconductors for molecular sensing applications. This work focuses on quantifying the GaSb-water reaction kinetics by studying a model compound system consisting of a 50 nm thick GaSb layer on a 1000 nm thick highly Si-doped epitaxial grown InAsSb layer. Tracing of phonon modes by Raman spectroscopy over 14 h of reaction time shows that within 4 hours, the 50 nm of GaSb, opaque for visible light, transforms to a transparent material. Energy-dispersive X-ray spectroscopy shows that the reaction leads to antimony depletion and oxygen incorporation. The final product is a gallium oxide. The good conductivity of the highly Si-doped InAsSb and the absence of conduction states through the oxide are demonstrated by tunneling atomic force microscopy. Measuring the reflectivity of the compound layer structure from 0.3 µm to 20 µm and fitting of the data by the transfer-matrix method allows us to determine a refractive index value of 1.6 ± 0.1 for the gallium oxide formed in water. The investigated model system demonstrates that corrosion, i.e. antimony depletion and oxygen incorporation, transforms the narrow band gap material GaSb into a gallium oxide transparent in the range from 0.3 to 20 µm.

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“…The obtained results are predicted to help understand the elastic characteristics of Al x In 1-x P y Sb z As 1-y-z and for applications in optoelectronics.The multicomponent semiconductor alloys have drawn a great deal of attention for a variety of applications, including high-speed electrical and long-wavelength photonic devices [1]. The wide range of possible uses for mid-infrared 2-5 µm light sources and detectors, such as environmental gas monitoring, noninvasive medical diagnosis, adjustable IR spectroscopy, and free space optical communications, is essentially that keeps scientists interested in the development of III-V materials [2][3][4][5][6][7][8][9][10]. The usual perception of an III-V mixed alloy…”

mentioning

confidence: 99%

Mechanical and lattice vibrational investigations of nanostructured AlxIn1-xPySbzAs1-y-z alloys

Knoll¹,

Nowak²,

Reed³

2023

ETN

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The compositional dependence of the polarities, elastic constants, elastic moduli, Poisson's ratio, and linear compressibility has been computed for zinc blende AlxIn1-xPySbzAs1-y-z alloys with composition y ranging from 0 to 1. Also, the compositional influence of the bond-stretching force constant, bond-bending force constant, internal strain parameter, Cauchy ratio, effective charge, the Born ratio, anisotropy factor, and sound velocity has been determined. The experimental data and the studied properties for the novel studied alloy lattice matched to the InP substrate show a good level of agreement. The empirical pseudo-potential approach and the virtual crystal approximation have been employed in this work. The obtained results are predicted to help understand the elastic characteristics of AlxIn1-xPySbzAs1-y-z and for applications in optoelectronics.

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Raman spectroscopy of pentanary GaInAsSbP narrow gap alloys lattice matched to InAs and GaSb

Cited by 14 publications

References 23 publications

Electrochemically Gated Alloy Formation of Crystalline InAs Thin Films at Room Temperature in Aqueous Electrolytes

Electrochemically Gated Alloy Formation of Crystalline InAs Thin Films at Room Temperature in Aqueous Electrolytes

Mid-IR plasmonic compound with gallium oxide toplayer formed by GaSb oxidation in water

Mechanical and lattice vibrational investigations of nanostructured AlxIn1-xPySbzAs1-y-z alloys

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