Raman spectroscopy of arsenolite: crystalline cubic As4O6

Gilliam, Sean J.; Merrow, Clifton N.; Kirkby, Scott J.; Jensen, James O.; Zeroka, Daniel; Banerjee, Aishwaryadev

doi:10.1016/s0022-4596(03)00082-3

Cited by 31 publications

(11 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7 has confirmed the composition of the precipitate to be As 2 O 3 , shown, similar to the results reported in [42]. We can predict that in As-rich and even in stoichiometric glass the precipitate could be formed during dissolution of bulk glass by the oxidation of As-As bonds [42] as it was previously observed during radiation treatment of bulk As 2 S 3 [43,44]. But the mechanism for the creation of As 2 O 3 precipitate in S-rich compositions is not completely clear yet, since the concentration of As-As bonds is negligible.…”

Section: Discussionsupporting

confidence: 89%

Structural features of spin-coated thin films of binary AsS− chalcogenide glass system

et al. 2015

View full text Add to dashboard Cite

Spin-coating technology offers a convenient method for fabricating photostable chalcogenide glass thin films that are especially attractive for applications in IR optics. In this paper we report the structure of spin-coated As x S 100 − x (x = 30, 35, 40) thin films as determined using high resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy, especially in relation to composition (i.e. As/S ratio) and preparation process variables. It was observed that As atoms during preparation have a tendency to precipitate out in close to stoichiometric compositions. The mechanism of bonding between the inorganic matrix and organic residuals is discussed based on the experimental data. A weak interaction between S ions and amine-based clusters is proposed as the basis of structural organization of the organic-inorganic interface.

show abstract

Section: Discussionsupporting

confidence: 89%

Structural features of spin-coated thin films of binary AsS− chalcogenide glass system

et al. 2015

View full text Add to dashboard Cite

show abstract

“…All the Raman modes have been identified and listed in Table 3. This is in agreement with the results from Gilliam [17] and Takagaki [18]. Silicon has only one first order Raman active mode at 520 cm −1 at the Brillouin zone center from the triply degenerate optical phonons.…”

Section: Layer Evolution: Kinetics Of As 2 O 3 Micro-crystal Formationsupporting

confidence: 92%

“…The Raman spectrum clearly identifies the micro-crystal phase as arsenolite (confirming EXAFS data), which is the cubic crystalline phase of arsenic tri-oxide [17] as shown in Fig. 7.…”

Section: Layer Evolution: Kinetics Of As 2 O 3 Micro-crystal Formationsupporting

confidence: 72%

“…The arsenolite phase has the following Raman active modes -two A 1g , two E g , four T 2g and few other combination modes. The T 2g mode observed at 84 cm −1 could be due to a translational mode, since they normally have low Raman shift [17]. All the Raman modes have been identified and listed in Table 3.…”

Section: Layer Evolution: Kinetics Of As 2 O 3 Micro-crystal Formationmentioning

confidence: 99%

See 1 more Smart Citation

Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

Vishwanath

Demenev

Giubertoni

et al. 2015

Applied Surface Science

View full text Add to dashboard Cite

a b s t r a c tHigh fluence (>10 15 ions/cm 2 ) low-energy (<2 keV) plasma immersion ion implantation (PIII) of AsH 3 + on (1 0 0) silicon was investigated, with the focus on stability and retention of the dopant. At this dose, a thin (∼3 nm) amorphous layer forms at the surface, which contains about 45% arsenic (As) in a silicon and oxygen matrix. The presence of silicon indicates that the layer is not only a result of deposition, but predominantly ion mixing. High fluence PIII introduces high concentration of arsenic, modifying the stopping power for incoming ions resulting in an increased deposition. When exposed to atmosphere, the arsenic rich layer spontaneously evolves forming arsenolite As 2 O 3 micro-crystals at the surface. The micro-crystal formation was monitored over several months and exhibits typical crystal growth kinetics. At the same time, a continuous growth of native silicon oxide rich in arsenic was observed on the exposed surface, suggesting the presence of oxidation enhancing factors linked to the high arsenic concentration at the surface.

show abstract

“…In the Raman spectra of the 1 year sample the arsenic trioxide As 2 O 3 was also identified with characteristic bands at 781, 560, 469, 368, 266 and 180 cm −1 (Fig. 5(c)), [32,33] in agreement with the XRD data. This oxide is found in nature, as an oxidation product of arsenic bearing sulphides.…”

Section: µ-Ramansupporting

confidence: 77%

A study on red lead degradation in a medieval manuscriptLorvão Apocalypse(1189)

Miguel

Claro

Gonçalves³

et al. 2009

J Raman Spectroscopy

View full text Add to dashboard Cite

The mechanisms of red lead degradation were studied in a medieval Portuguese codex, Lorvão Apocalypse (1189), by Raman microscopy (µ-Raman) and micro-X-ray diffraction (µ-XRD). The range of pigments found for the illuminations is mainly limited to vermilion, orpiment and red lead. Micro-Fourier transform infrared spectroscopy (µ-FTIR) determined that the pigments were applied in a proteinaceous binding medium. In the red and orange colours, arsenic (As) was determined, by micro-energy dispersive X-ray fluorescence (µ-EDXRF), to be ranging 1-4% (wt %). For those colours, lead white and calcium carbonate were found as fillers whereas orpiment was applied as a pure pigment. Raman microscopy identified, unequivocally, the degradation product of red lead as galena [lead (II) sulphide, PbS].To determine the main factors affecting red lead degradation, a set of accelerating ageing experiments was designed to assess the influence of extenders and of the two other pigments, vermilion and orpiment. The experiments were followed by µ-Raman, µ-EDXRF and XRD. Raman microscopy results for the simulation of degradation of red lead, in the presence of orpiment, are in agreement to what was found in the Lorvão Apocalypse, galena being the main degradation product; also in common is a Raman band at ca. 810 cm −1 , which was attributed to a lead arsenate compound. It was concluded that in Lorvão Apocalypse, the degradation of red lead was a result of its reaction with orpiment.

show abstract

Raman spectroscopy of arsenolite: crystalline cubic As4O6

Cited by 31 publications

References 20 publications

Structural features of spin-coated thin films of binary AsS− chalcogenide glass system

Structural features of spin-coated thin films of binary AsS− chalcogenide glass system

Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

A study on red lead degradation in a medieval manuscriptLorvão Apocalypse(1189)

Contact Info

Product

Resources

About