2006
DOI: 10.1016/j.tsf.2006.07.164
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Raman spectroscopy characterization of diamond films on steel substrates with titanium carbide arc-plated interlayer

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Cited by 24 publications
(9 citation statements)
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“…Iron catalyzes graphite formation at diamond/steel interfaces during the CVD process [26,27] and the high solubility of carbon in the iron fcc phase results in prolonged diamond nucleation times [24,28]. Diamond and steel have very different coefficients of thermal expansion, which result in high stress within any diamond film deposited directly on steel [24].…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Iron catalyzes graphite formation at diamond/steel interfaces during the CVD process [26,27] and the high solubility of carbon in the iron fcc phase results in prolonged diamond nucleation times [24,28]. Diamond and steel have very different coefficients of thermal expansion, which result in high stress within any diamond film deposited directly on steel [24].…”
Section: Resultsmentioning
confidence: 99%
“…1(b) and (c) demonstrates growth of isolated FSDCs on AISI 1085 carbon steel substrates; these FSDCs show evidence of etching at the twin-plane boundary. The high solubility of carbon in the fcc phase of iron in this case ensures the long nucleation times [24] and low nucleation densities needed for observation of isolated FSDCs. Tungsten is less prone to carbide formation than Ti, Mo (or Fe) under typical diamond growth conditions, and was thus the substrate of choice (99.9 wt%, size: 6 Â 6 Â 3 mm 3 ) for most of the present studies.…”
Section: Methodsmentioning
confidence: 99%
“…In principle, the selected interlayer should meet the following requirements [9]: 1) avoid the diffusion of Fe towards interlayer surface; 2) allow the nucleation and growth of diamond on interlayer surface; 3) supply a good bonding to both diamond films and steel substrate; 4) have a suitable thermal expansion coefficient, which should be beneficial in reducing the mismatch between diamond and substrate. Improved nucleation and adhesion of diamond films have been obtained by the applications of various interlayers, such as W [8], Al [10], Mo [11], Ti, Cr [12], TiC [13] and CrN [1].…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, the film may be subjected to a high level of stress that may even cause the delamination of the diamond layer from the hard metal substrate. 2 Therefore, a study of diamond films deposited at varying the substrate pretreatments and/or the deposition parameters may be useful for industrial applications. In this respect, the application of Raman spectroscopy and photoluminescence (PL) to the study of the crystalline quality and phase purity of polycrystalline diamond films grown by microwave-plasma-enhanced chemical vapor deposition (CVD) on Si substrates has already led to the individuation of the best deposition conditions of 'detector grade' synthetic diamond.…”
Section: Introductionmentioning
confidence: 99%