Raman spectra of carbon-based materials excited at 1064 nm

Mennella, V.; Monaco, G.; Colangeli, L.; Bussoletti, E.

doi:10.1016/0008-6223(94)00113-e

Cited by 104 publications

(67 citation statements)

References 18 publications

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“…The D band is generally thought to be an indication of disordered or defective hexagonal planar graphite structures. The G band originates from the stretching vibrations in the basal plane of ideal graphite, and a combination of D and G bands is generally regarded as an indication of polycrystalline graphitic structures [7]. The Raman spectrum also shows weak peaks at positions near 500 cm [12,13,14,15] .…”

Section: Ruthenium Reaction With and Diffusion In 4h-sic And 6h-sic Umentioning

confidence: 99%

“…The reaction zone is observed to grow with increasing annealing temperature. The Ru/4H-SiC interface of the as-deposited sample as depicted in Fig [ 6,7,8,9,10,11] . The intensity ratio of the D and G peaks can be used to approximate the size of the crystalline graphite or degree of disorder of the graphite that is formed [6].…”

Section: Ruthenium Reaction With and Diffusion In 4h-sic And 6h-sic Umentioning

confidence: 99%

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Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Munthali

Theron

Auret

et al. 2014

Journal of Nuclear Materials

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A thin film of ruthenium(Ru) was deposited on n-type 4H-SiC and 6H-SiC by electron beam deposition technique so as to study interface reaction of ruthenium with silicon carbide at various annealing temperatures, and in two annealing environments namely vacuum and air. The Ru-4H-SiC and Ru-6H-SiC films were both annealed isochronally in a vacuum furnace at temperatures ranging from 500 -1000 o C, and the second set of samples were also annealed in air for temperatures ranging from 100 o C to 600 o C. After each annealing temperature, the films were analysed by Rutherford Backscattering spectrometry (RBS). Raman analysis and x-ray diffraction analysis were also used to analyse some of the samples. RBS analysis of 4H-SiC annealed in a vacuum showed evidence of formation of ruthenium silicide (Ru 2 Si 3 ) and diffusion of Ru into SiC starting from annealing temperature of 700 o C going upwards. In the case of Ru-6H-SiC annealed in a vacuum, RBS analysis showed formation of Ru 2 Si 3 at 600 o C, in addition to the diffusion of Ru into SiC at 800 o C . Raman analysis of the Ru-4H-SiC and Ru-6H-SiC samples that were annealed in a vacuum at 1000 o C showed clear D and G carbon peaks which was evidence of formation of graphite . As for the samples annealed in air ruthenium oxidation started at a temperature of 400 o C and diffusion of Ru into SiC commenced at temperatures of 500 o C for both Ru-4H-SiC and Ru-6H-SiC. X-ray diffraction analysis of samples annealed in air at 600 o C showed evidence of formation of ruthenium silicide in both 4H and 6H-SiC but this was not corroborated by RBS analysis.

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Section: Ruthenium Reaction With and Diffusion In 4h-sic And 6h-sic Umentioning

confidence: 99%

Section: Ruthenium Reaction With and Diffusion In 4h-sic And 6h-sic Umentioning

confidence: 99%

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Munthali

Theron

Auret

et al. 2014

Journal of Nuclear Materials

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“…Ru is observed to react with 6H-SiC, and is found at 2300 x 10 15 at./cm 2 from the surface (Fig.6) after annealing at 1000 o C. Raman analysis of the thin film sample (Fig. 7) shows the formation of graphite as indicated by a typical carbon D peak at 1354 cm -1 and G peak at 1589 cm -1 [12,13,14,15,16,17] . The intensity ratio of the D and G peak are used to approximate the size of the crystalline graphite or degree of disorder of the graphite .…”

Section: Resultsmentioning

confidence: 96%

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

et al. 2014

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Thin films and Schottky diodes dots of ruthenium (Ru) on bulk-grown n-type-6-hexagonalsilicon carbide (6H-SiC) were annealed isochronally in a vacuum furnace at temperatures ranging from 500 -1000 o C. Rutherford backscattering spectroscopy analysis of the thin films showed formation of ruthenium silicide (Ru 2 Si 3 ) at 800 o C,while diffusion of Ru into 6H-SiC commenced at 800 o C . Raman analysis of the thin films annealed at 1000 o C showed clear D and G carbon peaks which was evidence of formation of graphite . At this annealing temperature the Schottky contact was observed to convert to an ohmic contact, as evidenced by the linearity of current-voltage characteristic , thereby rendering the diode unusable. The transformation from Schottky contact to ohmic contact is attributed to graphite formation at the interface.

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“…The D and G Raman modes were deconvolved as Lorentzian peaks and the D ′ was modeled as a Gaussian peak, as suggested by Ferrari and Robertson [21] and Mennella et al [30] The ratio of the D and G band intensities were calculated from the intensities of the isolated peaks. The Raman spectra of the nanostructured materials and deconvolution of the peaks are shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Role of nanocrystalline domain size on the electrochemical double-layer capacitance of high edge density carbon nanostructures

et al. 2015

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Nanostructured carbon materials, especially activated carbon, carbon nanotubes, and graphene, have been widely studied for supercapacitor applications. To maximize the efficacy of these materials for electrochemical energy storage, a detailed understanding of the relationship between the nanostructure of these materials and their performance as supercapacitors is required. A fundamental structural parameter obtained from the Raman spectra of these materials, the in-plane correlation length or nanocrystalline domain size, is found to correlate with the electrochemical capacitance, regardless of other morphological features. This correlation for a common nanostructural characteristic is believed to be the first result of its kind to span several distinct nanostructured carbon morphologies, including graphene-carbon nanotubes hybrid materials, and may allow more effective nanoscale engineering of supercapacitor electrode materials.

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Raman spectra of carbon-based materials excited at 1064 nm

Cited by 104 publications

References 18 publications

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Microstructure evolution and diffusion of ruthenium in silicon carbide, and the implications for structural integrity of SiC layer in TRISO coated fuel particles

Solid State Reaction of Ruthenium with 6H-SiC Under Vacuum Annealing and the Impact on the Electrical Performance of its Schottky Contact for High Temperature Operating SiC-Based Diodes

Role of nanocrystalline domain size on the electrochemical double-layer capacitance of high edge density carbon nanostructures

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