CH3NH3PbI3 films with micrometer grains and microsecond carrier lifetimes are prepared through additive engineering.

The atomic bonding configurations of carbon bonding in diamond and diamondlike thin films are explored using Raman scattering. The general aspects of Raman scattering from composites are presented. Effects are discussed due to crystalline or amorphous structures, large versus microcrystalline domains, and strong optical absorption and transparent regions. The Raman scattering from diamondlike films shows several features which are attributed to microcrystalline graphitelike structures which all originate from the same region in the sample. In contrast, the spectra of diamond films show features attributed to different components of a composite film. Components identified are crystalline diamond, and disordered and microcrystalline graphitic structures. The presence of precursor microcrystalline or amorphous diamond structures is also suggested.

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The development of stretchable electronics requires the invention of compatible high-performance power sources, such as stretchable supercapacitors and batteries. In this work, two-dimensional (2D) titanium carbide (Ti 3 C 2 T x ) MXene is being explored for flexible and printed energy storage devices by fabrication of a robust, stretchable high-performance supercapacitor with reduced graphene oxide (RGO) to create a composite electrode. The Ti 3 C 2 T x /RGO composite electrode combines the superior electrochemical and mechanical properties of Ti 3 C 2 T x and the mechanical robustness of RGO resulting from strong nanosheet interactions, larger nanoflake size, and mechanical flexibility. It is found that the Ti 3 C 2 T x /RGO composite electrodes with 50 wt % RGO incorporated prove to mitigate cracks generated under large strains. The composite electrodes exhibit a large capacitance of 49 mF/cm 2 (∼490 F/cm 3 and ∼140 F/g) and good electrochemical and mechanical stability when subjected to cyclic uniaxial (300%) or biaxial (200% × 200%) strains. The as-assembled symmetric supercapacitor demonstrates a specific capacitance of 18.6 mF/cm 2 (∼90 F/cm 3 and ∼29 F/g) and a stretchability of up to 300%. The developed approach offers an alternative strategy to fabricate stretchable MXene-based energy storage devices and can be extended to other members of the large MXene family.

The I-V characteristics of titanium contacts on polycrystalline diamond have been correlated with xray-photoelectron-spectroscopy (XPS) and Auger-electron-spectroscopy (AES) characterizations of the interface. As-deposited titanium contacts were rectifying in nature because of minimal interaction between as-deposited titanium and diamond as confirmed via XPS and AES. Once annealed, however, these contacts became Ohmic. The change was related to the formation of a carbide at the interface as observed by XPS. The Schottky-barrier height of the titanium contacts, which was determined by valence-band XPS, decreased from 1.3 to 0.8 eV as a result of the postdeposition annealing. It is believed that the carbide formation at the interface creates a diamond surface layer rich in electrically active defects which lower the barrier height of the metal and increase the leakage current. The interface between titanium and an argon-sputtered diamond surface was also characterized. Titanium formed asdeposited Ohmic contacts on the sputtered surface. A high density of ion-radiation-induced defects and a formation of a carbide during deposition both contributed to the Ohmic-contact formation. These contacts remained Ohmic after postdeposition annealing despite the fact that the annealing did not increase the carbide formed at the interface. It is believed that the carbide formed by the deposition of titanium behaved as a diffusion barrier to prevent the damaged layer from being annealed out into the titanium overlayer. It is concluded that most materials will yield rectifying contacts on a clean diamond surface. Ohmic contacts can be obtained by modifying the interface in some way (i.e. , carbide formation, sputtering, etc.).