Raman scattering with infrared excitation resonant with the 
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 indirect band gap

Sotgiu, Simone; Venanzi, Tommaso; Macheda, Francesco; Stellino, Elena; Ortolani, Michele; Postorino, P.; Baldassarre, Leonetta

doi:10.1103/physrevb.106.085204

Cited by 4 publications

(5 citation statements)

References 51 publications

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Section: Electronic Energy Band Structurementioning

confidence: 99%

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Emerging 2D Materials with Nonparabolic Bands for Ultrafast Photonics

Liu,

Cui,

Zhang

et al. 2023

Small Science

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In recent years, 2D materials have been widely used in optical and photonic applications such as mode lockers, optical switches, polarizers, and optical modulators. As is known, many 2D optical materials are parabolic semiconductors. The electronic states determines the material's optical characteristics. The energy band structure with a bandgap dominates the electron dynamics process associated with intrinsic light absorption. Particularly, the Dirac cone and flat band (FB) are special nonparabolic energy band structures in materials. Dirac materials are characterized by a zero bandgap, and FB materials have a completely flat dispersionless band in the Brillouin zone. These materials are used as emergent and promising 2D materials for saturable absorbers (SAs) due to their excellent nonlinear optical response, and they become potential candidates for ultrafast photonics applications. Herein, the focus is on the characteristics of the energy band structure; the carrier dynamics are reviewed, and application in ultrafast photonics are summarized.

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Section: Electronic Energy Band Structurementioning

confidence: 99%

mentioning

confidence: 99%

Emerging 2D Materials with Nonparabolic Bands for Ultrafast Photonics

Liu,

Cui,

Zhang

et al. 2023

Small Science

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show abstract

“…4b and d. Their linear and non-linear responses are analyzed using the following eqn ( 6) and (7). The linear dependence can be expressed as follows-…”

Section: Thermal Transport Behaviour Of Mose 2 Nanostructuresmentioning

confidence: 99%

“…5,6 Theoretical and experimental investigations of MoSe 2 are being explored for atomically thin spintronic and valleytronic devices due to its spin-splitting energy at the top of the valence band. 7,8 Among different methods such as mechanical/chemical exfoliations, chemical vapor deposition (CVD), and physical methods such as sputtering/pulsed laser deposition involving physical deposition of atoms, ions, or molecules on a substrate, the CVD technique can generate large areas of thin lms of MoSe 2 with and without intrinsic defects. 9 This defect tunability in CVD-grown MoSe 2 can be utilized for the development of new quantum light sources such as SPEs, exible nano-electronics, and optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%