Morphological dependent exciton dynamics and thermal transport in MoSe<sub>2</sub> films

Gupta, Jay Deep; Jangra, Priyanka; Majee, Bishnu Pada; Mishra, Ashish Kumar

doi:10.1039/d3na00164d

Cited by 4 publications

(1 citation statement)

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“…The phonon spectra of the orthorhombic phase show the gap closing at around 4 THz upon 3 GPa. Additionally, low-frequency phonons gradually harden to 2 THz, while phonons at 8 THz soften and stabilize at around 6 THz, which may enhance the efficiency of four-phonon scattering. , These provide a more efficient pathway for phonon–phonon scattering. Therefore, although the electronic bandgap closes after 3 GPa, the rate of interband recombination continues to increase.…”

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confidence: 99%

Modulating Carrier Dynamics in PdSe₂: The Role of Pressure in Electronic and Phononic Interactions

Wang,

Niu,

Jiang

et al. 2024

Nano Lett.

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PdSe 2 is a puckered transition metal dichalcogenide that has been reported to undergo a two-dimensional to threedimensional structural transition under pressure. Here, we investigated the electronic and phononic evolution of PdSe 2 under high pressure using pump−probe spectroscopy. We observed the electronic intraband and interband transitions occurring in the d orbitals of Pd, revealing the disappearance of the Jahn−Teller effect under high pressure. Furthermore, we found that the decay rates of interband recombination and intraband relaxation lifetimes change at 3 and 7 GPa, respectively. Firstprinciples calculations suggest that the bandgap closure slows the decay rate of interband recombination after 3 GPa, while the saturation of phonon−phonon scattering is the main reason for the relatively constant intraband relaxation lifetime. Our work provides a novel perspective for understanding the evolution of the electron and modulation of the carrier dynamics by phonons under pressure.

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confidence: 99%

Modulating Carrier Dynamics in PdSe₂: The Role of Pressure in Electronic and Phononic Interactions

Wang,

Niu,

Jiang

et al. 2024

Nano Lett.

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Optothermal Raman Spectroscopy for Thermal Transport Study

Gupta,

Jangra,

Mishra

2024

Springer Series in Optical Sciences

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Temperature- and Pressure-Dependent Photoluminescence Emission of Bulk GaSe_0.5Te_0.5 Alloy

Leite,

N. Silva,

Oliveira

et al. 2024

J. Phys. Chem. C

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In this study, we conduct a comprehensive investigation into the temperature and pressure dependencies of photoluminescence (PL) in a bulk GaSe0.5Te0.5 alloy. By using density functional theory (DFT) calculations and experimental measurements, we identify and distinguish the contributions of free excitons and indirect transitions to the PL spectrum. Our analysis reveals a nonlinear redshift for these transitions over the temperature range of 90–667 K, evolving in accord with the modified Varshni equation. We observe a pronounced influence of electron–phonon coupling in the GaSe0.5Te0.5 alloy compared to that of GaTe and GaSe crystal structures. Below 180 K, we detect the emergence of new broad bands associated with bound excitons and radiative recombination of trap states. Furthermore, by employing the Arrhenius plots, we determine activation energies for nonradiative recombination of the indirect and free exciton transitions. Concerning the pressure dependence of the PL spectra, the free exciton and indirect transitions undergo a linear redshift within the specific pressure range of 0.3 to 4.3 GPa, accompanied by a continuous reduction in PL intensity, leading to complete quenching at 4.8 GPa. This phenomenon is attributed to a direct-to-indirect band gap crossover. Pressure-dependent band structure calculation via DFT supports this assumption and shows a further metallization of the GaSe0.5Te0.5 alloy at ∼8.0 GPa. This study sheds new light on understanding the optical properties of the GaSe0.5Te0.5 alloy under extreme pressure and temperature conditions, thereby opening avenues for tailored applications and guiding future research efforts in this field.

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Morphological dependent exciton dynamics and thermal transport in MoSe₂ films

Abstract: Thermal transport and exciton dynamics of semiconducting transition metal dichalcogenides (TMDCs) play an immense role in next-generation electronic, photonic and thermoelectric devices. In this work, we synthesize distinct morphologies (snowlike...

Cited by 4 publications

References 48 publications

Modulating Carrier Dynamics in PdSe₂: The Role of Pressure in Electronic and Phononic Interactions

Modulating Carrier Dynamics in PdSe₂: The Role of Pressure in Electronic and Phononic Interactions

Optothermal Raman Spectroscopy for Thermal Transport Study

Temperature- and Pressure-Dependent Photoluminescence Emission of Bulk GaSe_0.5Te_0.5 Alloy

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Morphological dependent exciton dynamics and thermal transport in MoSe2 films

Abstract: Thermal transport and exciton dynamics of semiconducting transition metal dichalcogenides (TMDCs) play an immense role in next-generation electronic, photonic and thermoelectric devices. In this work, we synthesize distinct morphologies (snowlike...

Cited by 4 publications

References 48 publications

Modulating Carrier Dynamics in PdSe2: The Role of Pressure in Electronic and Phononic Interactions

Modulating Carrier Dynamics in PdSe2: The Role of Pressure in Electronic and Phononic Interactions

Optothermal Raman Spectroscopy for Thermal Transport Study

Temperature- and Pressure-Dependent Photoluminescence Emission of Bulk GaSe0.5Te0.5 Alloy

Contact Info

Product

Resources

About

Morphological dependent exciton dynamics and thermal transport in MoSe₂ films

Modulating Carrier Dynamics in PdSe₂: The Role of Pressure in Electronic and Phononic Interactions

Modulating Carrier Dynamics in PdSe₂: The Role of Pressure in Electronic and Phononic Interactions

Temperature- and Pressure-Dependent Photoluminescence Emission of Bulk GaSe_0.5Te_0.5 Alloy