Raman scattering structural evaluation of CuInS2 thin films

Álvarez-Garcı́a, J.; Pérez-Rodrı́guez, A.; Romano‐Rodríguez, A.; Jawhari, T.; Morante, J.R.; Scheer, Roland; Calvet, Wolfram

doi:10.1016/s0040-6090(00)01714-4

Cited by 45 publications

(31 citation statements)

References 7 publications

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“…Despite the fact that the Raman spectra of the CH ordered phases of CuInC 2 compounds are well-known, 10,13,14 very few works have been reported on the analysis of the dynamical properties of the CA ordered phase. 10,15 In these works, even if there is consensus in attributing the additional peaks in the Raman spectra to the vibrational modes from the CA ordered phase, the identification of the main CA mode is still not clear: although the experimental results in both CuInSe 2 and CuInS 2 have led to the identification of this peak with an A 1 vibrational mode, 12,16 and in the case of CuInS 2 previous theoretical considerations have confirmed this assignment, 10 more recently the theoretical calculation performed by Lazewski et al on the lattice dynamics of CA ordered CuInSe 2 have led them to identify this peak with an E 2 mode. 15 To clarify this, it appears worthwhile to calculate and compare the zone-center phonon spectra of the CA structure for both CuInC 2 ͑C =S,Se͒ compounds.…”

Section: Introductionmentioning

confidence: 99%

Vibrational and crystalline properties of polymorphicCuInC2(C=Se,S)chalcogenides

et al. 2005

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This paper deals with the analysis of the vibrational and crystallographic properties of CuInC 2 ͑C =S,Se͒ chalcogenides. Experimentally, evidence on the coexistence in epitaxial layers of domains with different crystalline order-corresponding to the equilibrium chalcopyrite ͑CH͒ and to CuAu ͑CA͒-has been obtained by cross section transmission electron microsopy ͑TEM͒ and high resolution TEM ͑HREM͒. Electron diffraction and HREM images give the crystalline relationship ͓110͔ CH ʈ ͓100͔ CA and ͑112͒ CH ʈ ͑011͒ CA , observing the existence of a ͑112͒ CH ʈ ͑001͒ CA interphase between different ordered domains. The vibrational properties of these polytypes have been investigated by Raman scattering. Raman scattering, in conjunction with XRD, has allowed identifying the presence of additional bands in the Raman spectra with vibrational modes of the CA ordered phase. In order to interpret these spectra, a valence field force model has been developed to calculate the zone-center vibrational modes of the CA structure for both CuInS 2 and CuInSe 2 compounds. The results of this calculation have led to the identification, in both cases, of the main additional band in the spectra with the total symmetric mode from the CuAu lattice. This identification is also supported by first-principles frozenphonon calculations. Finally, the defect structure at the interphase boundaries between different polymorphic domains has also been investigated.

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Section: Introductionmentioning

confidence: 99%

Vibrational and crystalline properties of polymorphicCuInC2(C=Se,S)chalcogenides

et al. 2005

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“…This agrees with recent results on Raman polarization measurements performed in epitaxial CuInS 2 layers, which show both the CIS 2 A 1 mode and the additional 305 cm Ϫ1 mode to be totally symmetric. 13 This suggests this mode to be related to CuAu ordering or to local arrangements of atoms giving rise to a local vibrational mode. The presence of CuAu ordering in the polycrystalline layers is still not clear, and further measurements are in progress to clarify this issue.…”

mentioning

confidence: 99%

Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical composition

Álvarez-Garcı́a

Pérez-Rodrı́guez

Romano‐Rodríguez

et al. 2001

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The microstructure of CuInS 2 ͑CIS 2 ) polycrystalline films deposited onto Mo-coated glass has been analyzed by Raman scattering, Auger electron spectroscopy ͑AES͒, transmission electron microscopy, and x-ray diffraction techniques. Samples were obtained by a coevaporation procedure that allows different Cu-to-In composition ratios ͑from Cu-rich to Cu-poor films͒. Films were grown at different temperatures between 370 and 520°C. The combination of micro-Raman and AES techniques onto Ar ϩ -sputtered samples has allowed us to identify the main secondary phases from Cu-poor films such as CuIn 5 S 8 ͑at the central region of the layer͒ and MoS 2 ͑at the CIS 2 /Mo interface͒. For Cu-rich films, secondary phases are CuS at the surface of as-grown layers and MoS 2 at the CIS 2 /Mo interface. The lower intensity of the MoS 2 modes from the Raman spectra measured at these samples suggests excess Cu to inhibit MoS 2 interface formation. Decreasing the temperature of deposition to 420°C leads to an inhibition in observing these secondary phases. This inhibition is also accompanied by a significant broadening and blueshift of the main A 1 Raman mode from CIS 2 , as well as by an increase in the contribution of an additional mode at about 305 cm Ϫ1 . The experimental data suggest that these effects are related to a decrease in structural quality of the CIS 2 films obtained under low-temperature deposition conditions, which are likely connected to the inhibition in the measured spectra of secondary-phase vibrational modes.

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“…The secondary phase was further thought to be an In-rich compound because it was not etched away by KCN treatment, and the Raman spectra of (204/220)-oriented films always showed the strong 305 cm -1 mode, which can originate from an In-rich environment. 25,31 In addition, the Cu/In ratio of the film increased by removing the secondary phase through postgrowth annealing at 600 °C. The bulk resistivity calculated from sheet resistance was between 0.1 Ω·cm and 30 Ω·cm, and p-type conduction was observed for all the CuInS 2 films grown using SSPs.…”

Section: Discussionmentioning

confidence: 99%

“…It was reported that this additional mode could be assigned to a defect-related In-rich local vibrational mode. 25,31 The In-rich secondary phase could originate from this In-rich local environment. However, alternate ordering of Cu and In on the (201) planes of metal sublattice (Cu-Au ordering) was found in polycrystalline CuInS 2 films, 32 and this ordering could also be the origin of the mode.…”

mentioning

confidence: 99%

“…Further discussion about this mode can be found in the literature. 31 In order to prevent secondary phase formation, (112)-oriented film growth must be targeted, and the surface kinetic regime where (204/220)-oriented film growth is favored, should be avoided. It is known that the molecular structure and the decomposition kinetics of the precursor at the growth surface can affect the overall surface kinetics and subsequent film growth, resulting in a different preferred orientation.…”

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confidence: 99%

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CuInS2 films deposited by aerosol-assisted chemical vapor deposition using ternary single-source precursors

Jin

Banger

Harris

et al. 2005

Materials Science and Engineering: B

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Raman scattering structural evaluation of CuInS2 thin films

Cited by 45 publications

References 7 publications

Vibrational and crystalline properties of polymorphicCuInC2(C=Se,S)chalcogenides

Vibrational and crystalline properties of polymorphicCuInC2(C=Se,S)chalcogenides

Microstructure and secondary phases in coevaporated CuInS2 films: Dependence on growth temperature and chemical composition

CuInS2 films deposited by aerosol-assisted chemical vapor deposition using ternary single-source precursors

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