CuInS2 films deposited by aerosol-assisted chemical vapor deposition using ternary single-source precursors

Heterometallic Chalcogenido Clusters Containing Lanthanides and Main Group Metals: Emissive Precursors to Ternary Solid-State Compounds

“…Analysis of the organic products by GC/MS identified SePh 2 as the Ph-containing products in both experiments. While ternary materials have been prepared in this fashion (both alloys − and compounds with well-defined M/M‘ lattice positions), − the present compounds are distinctive in their combination of such dissimilar metals.…”

Tunable structural, morphological and optical properties of undoped, Mn, Ni and Ag-doped CuInS2 thin films prepared by AACVD

“…mass-transport limited growth). [34][35][36][37] This results in a reduced number of small nucleation crystallites to which monomer ions are added along the (112) lattice plane influencing the growth of larger microstructures via coalescence of crystallites. Typically, a change in morphology is reflected in the intensity of the p-XRD reflections, 37 however a change in morphology at 450 °C does not deviate from the relative diffraction peak intensities of other samples which supports the preposition of coalescing crystallites which share a similar growth orientation as the emergent microstructure.…”

“…These variations could be related to microstructure size, morphology, composition and constituent native defects. 37,45,46 However, it is more plausible to suggest that they are attributed to the influence on the density of states of valence and conduction bands as a consequence of elemental composition. 8,[45][46][47][48] Table 1: Optical properties and elemental composition (derived from EDS) of CIS thin films.…”

Spray CVD of Single‐Source Precursors for Chalcopyrite I–III–VI2 Thin‐Film Materials

“…It was found that fi lms often contained a secondary phase (2 θ = 26.5 ° ), believed to be indium -rich (In -rich). 7 The more In -rich the fi lm, the more likely it was that the secondary phase was present, with the fi lm being more (204/220) oriented. EDS measurements (not shown) indicate that the fi lms containing the secondary phase were In -rich and that the Cu/In ratio increased when the secondary phase was reduced upon annealing [ Fig.…”

“…The nature of the secondary In -rich phase was also confi rmed by Raman spectroscopy. 7 Processing conditions were sought to prevent the formation of the secondary phase, to favor growth conditions of (112) -oriented fi lms, and to avoid the surface kinetic regime where a (204/220) -oriented fi lm is favored. In our setup, for any reactor, the substrate temperature had to stay around 400 ° C in order to promote the growth of (112) -oriented fi lms without a high concentration of the In -rich secondary phase.…”