Raman Scattering by Silicon and Germanium

Parker, James; Feldman, D. W.; Ashkin, M.

doi:10.1103/physrev.155.712

Cited by 575 publications

(343 citation statements)

References 10 publications

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“…This result indicates that SiNS-650 had a higher crystallinity than commercial SiNPs. 22 Furthermore, the mesoporous structure of SiNS-650 was confirmed from its nitrogen adsorption-desorption isotherms (Figure 2g). Its hysteresis loop showed a typical type-IV isotherm, 23 indicating that mesopores were present within SiNS-650.…”

Section: Resultsmentioning

confidence: 77%

All-in-one synthesis of mesoporous silicon nanosheets from natural clay and their applicability to hydrogen evolution

et al. 2016

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Silicon nanosheets have attracted much attention owing to their novel electronic and optical properties and compatibility with existing silicon technology. However, a cost-effective and scalable technique for synthesizing these nanosheets remains elusive. Here, we report a novel strategy for producing silicon nanosheets on a large scale through the simultaneous molten-salt-induced exfoliation and chemical reduction of natural clay. The silicon nanosheets thus synthesized have a high surface area, are ultrathin (~5 nm) and contain mesoporous structures derived from the oxygen vacancies in the clay. These advantages make the nanosheets a highly suitable photocatalyst with an exceptionally high activity for the generation of hydrogen from a water-methanol mixture. Further, when the silicon nanosheets are combined with platinum as a cocatalyst, they exhibit high activity in KOH (15.83 mmol H 2 per s per mol Si) and excellent photocatalytic activity with respect to the evolution of hydrogen from a water-methanol mixture (723 μmol H 2 per h per g Si).

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Section: Resultsmentioning

confidence: 77%

All-in-one synthesis of mesoporous silicon nanosheets from natural clay and their applicability to hydrogen evolution

et al. 2016

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“…Figure 7a shows a µ-Raman spectrum of SLG/Ge/Si-tip heterostructure (see an illustration image in inset) using a 514 nm laser. It can be observed that besides the Si-(~520 cm -1 and the second order ~960 cm -1 ) 52 , Ge-18 cm -3 and Ge can be considered as intrinsic due to the absence of extended defects, which have an acceptor-like nature in Ge 56-57 . To illustrate the photovoltaic characteristics, Figure 7c shows a thermal equilibrium energy band diagram of the SLG/Ge/Si-tip photodetector under illumination at zero bias.…”

Section: Resultsmentioning

confidence: 99%

Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns

Niu

Capellini

Łupina

et al. 2016

ACS Appl. Mater. Interfaces

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Dislocation networks are one of the most principle sources deteriorating the performances of devices based on lattice-mismatched heteroepitaxial systems. We demonstrate here a technique enabling fully coherent Ge islands selectively grown on nano-tip patterned Si (001) substrates. The Si-tip patterned substrate, fabricated by complementary metal-oxidesemiconductor (CMOS) compatible nanotechnology, features ~50 nm wide Si areas emerging from a SiO 2 matrix and arranged in an ordered lattice. Molecular beam epitaxy (MBE) growths result in Ge nano-islands with high selectivity and having homogeneous shape and size. The ~850°C growth temperature required for ensuring selective growth has been shown to lead to the formation of Ge islands of high crystalline quality without extensive Si intermixing (with 91 at.% Ge). Nano-tip patterned wafers result in geometric, kinetic diffusion barrier intermixing hindrance confining the major intermixing to the pedestal region of Ge islands where kinetic diffusion barriers are however high. Theoretical calculations suggest that the thin SiGe layer at the interface plays nevertheless a significant role in realizing our fully coherent Ge nano-islands free from extended defects especially dislocations. Single layer graphene (SLG)/Ge/Si-tip Schottky junctions were fabricated and thanks to the absence of extended defect in Ge islands, they demonstrate high performance photodetection characteristics with responsivity and I on /I off ratio of ~45 mA/W and ~10 3 , respectively.

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“…Analysis of Raman spectra was also done on RGO deposited on silicon TMBS diode structure. From the analysis, there are first-order and second order scattering of Raman spectra at ~520 and ~950 cm -1 representing the existence of single-crystal silicon (Parker 1967). A weak and broad 2D peak at 2680 cm -1 is also observed in the analysis, which another indication of disorder.…”

Section: Analysis Of Graphene Materials Using Raman Spectroscopymentioning

confidence: 81%

Fabrication and Characterization of Graphene-on-Silicon Schottky Diode for Advanced Power Electronic Design

Hussin¹,

Ramli²,

Sabli³

et al. 2017

JSM

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In this study, graphene-on-silicon process technology was developed to fabricate a power rectifier Schottky diode for efficiency improvement in high operating temperature. Trench-MOS-Barrier-Schottky (TMBS) Dalam kajian ini, teknologi proses grafin-atas-silikon telah dibangunkan untuk memfabrikasi diod penerus kuasa Schottky bagi meningkatkan kecekapannya pada suhu operasi yang tinggi. Struktur diod Parit-MOS-Halangan-Schottky (TMBS) telah digunakan untuk meningkatkan prestasi peranti. Objektif utama kajian ini adalah untuk mengkaji kesan grafin oksida dikurangkan (RGO) yang dimendapkan pada permukaan silikon untuk pembentukan halangan

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Raman Scattering by Silicon and Germanium

Cited by 575 publications

References 10 publications

All-in-one synthesis of mesoporous silicon nanosheets from natural clay and their applicability to hydrogen evolution

All-in-one synthesis of mesoporous silicon nanosheets from natural clay and their applicability to hydrogen evolution

Photodetection in Hybrid Single-Layer Graphene/Fully Coherent Germanium Island Nanostructures Selectively Grown on Silicon Nanotip Patterns

Fabrication and Characterization of Graphene-on-Silicon Schottky Diode for Advanced Power Electronic Design

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