Fabrication and Characterization of Graphene-on-Silicon Schottky Diode for Advanced Power Electronic Design

Hussin, Mohd Rofei Mat; Ramli, Muhammad M.; Sabli, Sharaifah Kamariah Wan; Nasir, Iskhandar Md; Syono, Mohd Ismahadi; Wong, H.Y.; Zaman, Mukter

doi:10.17576/jsm-2017-4607-18

Cited by 8 publications

(4 citation statements)

References 22 publications

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“…It is also significant to clearly understand how the parameters in the reduction process influence the electrical characteristics of the rGO/Si junction. The inconsistency in the reported rGO/Si diode parameters between several previous studies is possibly due to different rGO preparation condition …”

Section: Introductionmentioning

confidence: 83%

Investigation on Transition Diode Properties of rGO‐GO/n‐Si Heterojunction

Abdullah

Rahman

Hashim

2019

Physica Status Solidi (a)

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Thermal annealing in the range of 100-700 C is applied to reduce the graphene oxide (GO) film into reduced-GO (rGO). Raman spectrum analysis and film conductivity analysis via Hall measurement confirms the advancement of reduction degree at higher annealing temperature (AT). The film conductivity is 19.7 S cm À1 after annealing at 700 C. Hall measurement also reveals the sudden appearance of electron conduction around 300 C. The type of attached oxygen functional groups determines the type of majority carrier in the film and modulate the work function of conductive crystalline sp 2 carbon. Then, the effect of AT to the current-voltage characteristics of ntype silicon/GO junction are discussed. The fabricated junction is analyzed based on Schottky junction operation using Rhoderick and Cheung methods. The higher reduction degree leads to lower series resistance. Schottky barrier height is found to increase to 0.92 eV for AT around 300 C, before it decreases at higher AT. Correlation between the barrier height and the hole concentration from Hall measurement can be noticed. Schottky junction with AT of 400 C gives the highest rectification ratio of 149, owing to moderate value of series resistance as well as high barrier height.

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Section: Introductionmentioning

confidence: 83%

Investigation on Transition Diode Properties of rGO‐GO/n‐Si Heterojunction

Abdullah

Rahman

Hashim

2019

Physica Status Solidi (a)

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“…On the other hand, in 2019, Firdaus et al, [11] has continuously produced CNT by using the same method in a rotary reactor. Furthermore, Hussin et al, [12] has fabricated and characterized graphene on silicon substrate by using spray coating technique for advanced power electronic design.…”

Section: Introductionmentioning

confidence: 99%

CFD Simulation Using ANSYS FLUENT of Jet Nozzle of Ethanol at Temperature of 360 K

Ismail

Maarof

Laham

et al. 2022

ARFMTS

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Spray coating technology is an advanced manufacturing process to break the liquid down into small droplets and disperse these droplets uniformly on the target substrate. The nozzle used in this fabrication process rapidly disintegrates the liquid jet at a direction of motion governed mainly by the prevailing airflow pattern in the spray region environment. According to Navier–Stokes energy equation, the fluid and environmental temperature capable of supplying additional energy to the droplet imparted the ejected liquid jet from the nozzles. With a view to understanding the liquid droplet behaviour at elevated temperatures, this study investigates the jet velocity, pressure, and temperature of ethanol at its evaporation temperature of 360 K using commercial CFD software (ANSYS FLUENT 2020). A numerical simulation of a simple nozzle system with a cone angle of 56° and an outlet radius of 0.1966 mm was modelled at 1 bar inlet pressure to study the effect of the environment temperature on the liquid jet. The result from the temperature profile showed that the liquid jet exhibited turbulence or a swirling effect at elevated temperature as the liquid absorbed thermal energy. The liquid jet temperature increased to the maximum temperature of +3K at a liquid jet distance of 10 cm when compared with normal environment temperature. This numerical study showed that environmental conditions such as temperature can impact the liquid jet quality and properties, which are difficult to observe during experimental work. It is expected that the finding from this work would benefit the industries, leading to better spray nozzle design for future coating applications.

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“…One of the approaches to address this issue is through the incorporation of high thermal conductivity materials, e.g. 2-dimensional (2D) graphene and reduced graphene oxide (rGO) as a heat spreader at device-level [1,2], and thermal interface material (TIM) at packaging-level application [3]. For this purpose, exceptionally high thermal conductivity graphene up to 5150 W/mK [4] and rGO up to 2600 W/mK [5] are both appealing.…”

Section: Introductionmentioning

confidence: 99%

Evaluation on the Reduced Graphene Oxide Thermal Interface Material and Heat Spreader for Thermal Management in High-Temperature Power Device

et al. 2021

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Thermally conductive reduced graphene oxide (rGO) is desirable for removing generated heat during the operation of a power device. Excessive heat accumulation results in device failure. In this article, the performance of rGO as a thermal interface material (TIM) and heat spreader on Si substrate was evaluated using a custom build thermal test setup. By a simple drop-casting of graphene oxide (GO) on Si followed by 700 oC thermal reduction, a hybrid film of GO (electrical insulator) and rGO (thermal conductor) was obtained. This was verified by Raman spectra and surface morphological image. Approximately 300 nm-thick rGO film prepared from 4-times drop-casting of GO exhibited the highest performance as a TIM and heat spreader. The heating rate of Si increased from 14.85 oC/W to 18.37 oC/W due to the improved heat transfer from the heater into the Si substrate. The experimental results endorsed the effectiveness of rGO as a thermal solution and verified the capability of the thermal test setup as a thermal simulation of a high-power device.

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Fabrication and Characterization of Graphene-on-Silicon Schottky Diode for Advanced Power Electronic Design

Cited by 8 publications

References 22 publications

Investigation on Transition Diode Properties of rGO‐GO/n‐Si Heterojunction

Investigation on Transition Diode Properties of rGO‐GO/n‐Si Heterojunction

CFD Simulation Using ANSYS FLUENT of Jet Nozzle of Ethanol at Temperature of 360 K

Evaluation on the Reduced Graphene Oxide Thermal Interface Material and Heat Spreader for Thermal Management in High-Temperature Power Device

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