Raman scattering by LO phonon-plasmon coupled modes in<i>n</i>-type InP

Artús, L.; Cuscó, R.; Ibáñez, J.; Blánco, N.; González‐Díaz, G.

doi:10.1103/physrevb.60.5456

Cited by 81 publications

(76 citation statements)

References 34 publications

(55 reference statements)

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“…Numerous studies have been reported on inelastic light scattering by LOPCMs in III-V semiconductors, and different models have been developed to analyze the LOPCM behavior. [39][40][41] The analysis of the LOPCM peaks is widely employed to evaluate in a contactless and nondestructive manner the free-carrier density of the samples. However, only a few reports have been devoted to investigate the pressure dependence of the LOPCMs.…”

Section: Long-wavelength L − Coupled Modesmentioning

confidence: 99%

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

et al. 2013

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We present an experimental and theoretical lattice-dynamical study of InN at high hydrostatic pressures. We perform Raman scattering measurements on five InN epilayers, with different residual strain and free electron concentrations. The experimental results are analyzed in terms of ab initio lattice-dynamical calculations on both wurtzite InN (w-InN) and rocksalt InN (rs-InN) as a function of pressure. Experimental and theoretical pressure coefficients of the optical modes in w-InN are compared, and the role of residual strain on the measured pressure coefficients is analyzed. In the case of the LO band, we analyze and discuss its pressure behavior considering the double-resonance mechanism responsible for the selective excitation of LO phonons with large wave vectors in w-InN. The pressure behavior of the L − coupled mode observed in a heavily doped n-type sample allows us to estimate the pressure dependence of the electron effective mass in w-InN. The results thus obtained are in good agreement with k · p theory. The wurtzite-to-rocksalt phase transition on the upstroke cycle and the rocksalt-to-wurtzite backtransition on the downstroke cycle are investigated, and the Raman spectra of both phases are interpreted in terms of DFT lattice-dynamical calculations.

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Section: Long-wavelength L − Coupled Modesmentioning

confidence: 99%

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

et al. 2013

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“…At high carrier concentrations in n-InP, a Drude model underestimates carrier concentration because band nonparabolicity is ignored. 7,50 Although the material systems are different, these effects probably still contribute to the differences between Hall effect and Raman spectroscopic measurement of hole concentration. In addition, at high hole concentrations, the neglect of inter-valence band scattering may Table I.…”

Section: Comparison Of Raman Spectroscopic and Hall Effect Measurementioning

confidence: 99%

“…The Drude model ignores Landau damping, spatial dispersion of the plasmon, band nonparabolicity, and finite temperature effects. 7,50,54 Despite the limitations of the Drude model, this model has the advantage that it requires the fewest input parameters and is computationally inexpensive, particularly compared to the Lindhard-Mermin model.…”

Section: P-type Gasb Raman Spectramentioning

confidence: 99%

“…By expressing this term using Fermi-Dirac integrals of order 1/2 and 3/2, this term can be made to apply in both classical and degenerate limits. 7,50 However, a Fermi energy must be determined to solve these integrals. Accurate determination of the Fermi energy requires an understanding of band density of states as a function of dopant concentration.…”

Section: P-type Gasb Raman Spectramentioning

confidence: 99%

“…[6][7][8][9] Fewer investigations of coupled mode spectra in p-type doped binary III-V materials have been reported and, consequently, the dependence of coupled mode spectra on hole concentration is not as well understood for a variety of materials.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Raman Spectroscopy Determination of Hole Concentration in p-Type GaSb

WS¹

2007

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Room temperature p-type GaSb bulk coupled mode spectra were measured as a function of hole concentration. These spectra were obtained using an optical system based on 752.55 nm excitation in order to obtain more sensitivity to bulk GaSb coupled mode scattering than possible with visible wavelength excitation-based systems. A relatively simple spectral model for the electronic contribution to the dielectric function was evaluated for determination of hole concentration from the bulk coupled mode spectra. Optically-derived values for hole concentration were determined by minimizing the sum of the residuals squared between an experimental and simulated spectrum as a function of total hole concentration and a plasmon damping parameter. Hole concentrations obtained from the Raman spectroscopic measurements deviated from the values determined from single field Hall effect measurements that were corrected to account for two band conduction by ≈20% to ≈65%. These deviations were attributed to the limitations of the spectral model employed and uncertainties in GaSb materials properties.

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Raman Spectroscopy of Semiconductors

Nakashima

Harima

2001

Handbook of Vibrational Spectroscopy

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The sections in this article are Introduction Structural Characterization of Semiconductors Fundamentals of Phonon R aman Scattering Determination of Crystallographic Orientation by R aman Polarization Measurement R aman Image Measurements of Solid‐State Growth Si Films Evaluation of Si C ‐Polytype Structures and Ga As  Al As Superlattices from the R aman Scattering R aman Scattering by Phonons in Mixed Crystals Evaluation of Defects in Semiconductors Stacking Faults in Si C Amorphous Semiconductors and Conversion from Amorphous to Crystalline State Characterization of Electronic Properties in Semiconductors LO –Phonon–Plasmon Coupled Mode Conclusion

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Raman scattering by LO phonon-plasmon coupled modes inn-type InP

Cited by 81 publications

References 34 publications

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

High-pressure lattice dynamics in wurtzite and rocksalt indium nitride investigated by means of Raman spectroscopy

Raman Spectroscopy Determination of Hole Concentration in p-Type GaSb

Raman Spectroscopy of Semiconductors

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