<scp>R</scp>aman Spectroscopy of Semiconductors

Nakashima, S.; Harima, Hiroshi

doi:10.1002/0470027320.s6303

Cited by 4 publications

(2 citation statements)

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“…El análisis in situ de los procesos de lavado esto es posible utilizando espectroscopia Raman. La capacidad de analizar y predecir la concentración de materiales en los procesos de lavado da pauta para establecer un tiempo de procesamiento óptimo y reduce el desperdicio debido a ataque químico, de tal manera que sólo se realiza el lavado cuando es necesario y se mantienen las especificaciones del producto de salida [39,40].…”

Section: G Aplicación En Semiconductoresunclassified

Raman spectroscopy and its applications

Castro‐Ramos¹

2013

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RESUMEN:El presente artículo trata una de las técnicas espectroscópicas con mayor crecimiento en los últimos 20 años: la espectroscopia Raman. Se describen algunas de las aplicaciones más importantes que se conocen en el mundo hoy en día desde su origen así como la relación que ha tenido con los avances tecnológicos que han generado un alto impacto en la sociedad. Se explica de manera didáctica a fin de que estudiantes de bachillerato y licenciatura conozcan los fundamentos de la espectroscopia Raman.Palabras clave: Espectroscopia, Espectroscopia Raman. ABSTRACT:This paper addresses one of the fastest growing spectroscopic techniques over the past 20 years: Raman spectroscopy. It describes some of the most important applications that are known in the world nowadays from its origin and the relationship it had with the technological advances that have generated a high impact on society. It explains in a didactic way so that high school and undergraduate students learn the fundamentals of Raman spectroscopy.

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Section: G Aplicación En Semiconductoresunclassified

Raman spectroscopy and its applications

Castro‐Ramos¹

2013

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“…Here we report a study of Cu-doped InAs NCs using Raman scattering aiming at addressing the effects of doping and seeking for signatures of active dopants in this model system for heavily doped NCs. Raman scattering spectroscopy is used widely in the study of bulk semiconductors for identification of the materials, for strain measurements, and for identifying defect locations . In addition, Raman spectroscopy was also used to study impurity doping in bulk semiconductors to reveal disorder.…”

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Phonon–Plasmon Coupling and Active Cu Dopants in Indium Arsenide Nanocrystals Studied by Resonance Raman Spectroscopy

Faust

Amit

Banin

2017

J. Phys. Chem. Lett.

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Doping of semiconductor nanocrystals is an emerging tool to control their properties and has recently received increased interest as the means to characterize the impurities and their effect on the electronic characteristics of the nanocrystal evolve. We present a temperature-dependent Raman scattering study of Cu-doped InAs nanocrystals observing changes in the relative scattering intensities of the different modes upon increased dopant concentrations. First, the longitudinal optical (LO) phonon overtone mode is suppressed, indicating weakening of the coupling strength related to the effect of screening by the free electrons. Second, the transverse optical (TO) mode is relatively enhanced compared to the LO mode, which is attributed to the appearance of a coupled phonon-plasmon mode analogous to observations for n-type doped bulk InAs. These signatures indicate that the Cu impurities serve as active dopants and occupy an impurity-related pseudo sub-band akin to the heavy doping limit.

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