Raman phonon modes of zinc blende InxGa1−xN alloy epitaxial layers

Tabata, A.; Leite, J. R.; Lima, Alisson Padilha de; Silveira, Eduardo; Lemos, V.; Frey, Terrence; As, D. J.; Schikora, D.; Lischka, K.

doi:10.1063/1.124608

Cited by 44 publications

(36 citation statements)

References 25 publications

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“…The other peaks correspond to LO phonons of the InGaN-layer and the In-rich InGaN phase. Taking into account a linear behaviour of the LO phonon frequencies vs. In-content we are able to determine the alloy composition [8]. We obtain the composition of the as grown InGaN layer x ¼ 0.36 which is in good agreement with our X-ray data.…”

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confidence: 77%

Thermal Annealing of Cubic‐InGaN/GaN Double Heterostructures

Husberg

Khartchenko

et al. 2002

phys. stat. sol. (c)

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We have performed annealing experiments with c-InGaN/GaN double heterostructures in order to obtain information on the thermal stability and the formation process of In-rich clusters in the InGaN layers. While the as grown samples showed a dominating luminescence at about 2.3 eV, the annealed samples showed a new luminescence peak at 2.8-3.0 eV which may be due to a band gap emission of a regenerated layer with an In-content of about x ¼ 0.20. These results are corroborated by micro Raman spectroscopy. Our annealing experiments show that at elevated temperatures In-atoms can diffuse in c-InGaN layers while In-rich aggregates are stable at growth temperature.Introduction Recent X-ray diffraction and micro-Raman measurements gave first evidence of In-rich inclusions in c-InGaN layers [1]. Resonant Raman measurements show that the PL of these layers is related to In-rich nanometer-size quantum-dot (QD) like structures [2]. Investigations of the structure and photoluminescence (PL) from c-InGaN/GaN double heterostructures (DHs) showed the importance of the QD-like In-rich structures for the radiative recombination of electron hole pairs [3]. Evidence for radiative recombination of excitons localized in nanostructures such as In-rich clusters in cubic InGaN multiple quantum wells (MQWs) has also been reported in Ref. [4].In this paper we report on annealing experiments which were performed in order to obtain further insight into the formation process and the thermal stability of the In-rich clusters in our c-InGaN/GaN DHs.

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confidence: 77%

Thermal Annealing of Cubic‐InGaN/GaN Double Heterostructures

Husberg

Khartchenko

et al. 2002

phys. stat. sol. (c)

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“…We suppose that these reflexes stem from InGaN (x 0.8) inclusions in the InGaN layers which were formed by the spinodal decomposition of the layers into a phase with x 0.8 and a phase of low In content. The Bragg peak of the latter (at about 2q 39 ) is superimposed by the ªlayer peakº and can be seen only in the spectrum of sample d. The existence of an In-rich phase within InGaN layers was also confirmed by recent Raman measurements [25].…”

Section: Photoluminescence Of Ingansupporting

confidence: 53%

The Optical Properties of Cubic III-Nitrides

Lischka¹

2000

phys. stat. sol. (a)

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“…For higher In content X-ray data as well as Raman measurements [51] gave some hints for phase separations and spinodale decomposition also in cubic In x Ga 1± ±x N epilayers [44].…”

Section: Cubic Ingan and Algan Alloysmentioning

confidence: 97%