Raman phonon emission in a driven double quantum dot

Colless, James; Croot, Xanthe; Stace, Thomas M.; Doherty, Andrew C.; Barrett, S. D.; Lü, Hong; Gossard, A. C.; Reilly, David

doi:10.1038/ncomms4716

Cited by 26 publications

(73 citation statements)

References 33 publications

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“…Electron transport through the DQD system may be influenced by the coupling to phonons of the semiconducting bulk material 18,23,25 . We assume that electrons in the DQD couple to bulk phonon modes via a piezoelectric interaction 30 .…”

Section: B Coupling To Phononsmentioning

confidence: 99%

“…Also double quantum dot (DQD) systems coupled to a microwave oscillator have been investigated already, both in theory [14][15][16][17][18][19] as well as in experiments [20][21][22][23][24][25][26] . By appropriately tuning the level structure of the DQD system with a single level each, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

“…On the one hand, the additional bath leads to decoherence which de- teriorates the performance of the device 17 . On the other hand, the phonons enhance the transport through the DQD and hence the photon production 18,19,25 . With multiple levels in each dot of the DQD system electron transport may be achieved via a series of transitions, and different lasing situations may arise whenever the microwave oscillator is in resonance with one of the transitions.…”

Section: Introductionmentioning

confidence: 99%

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Lasing and transport in a multilevel double quantum dot system coupled to a microwave oscillator

2016

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We study a system of two quantum dots, each with several discrete levels, which are coherently coupled to a microwave oscillator. They are attached to electronic leads and coupled to a phonon bath, both leading to inelastic processes. For a simpler system with a single level in each dot it has been shown that a population inversion can be created by electron tunneling, which in a resonance situation leads to lasing-type properties of the oscillator. In the multi-level system several resonance situations may arise, some of them relying on a sequence of tunneling processes which also involve non-resonant, inelastic transitions. The resulting photon number in the oscillator and the currentvoltage characteristic are highly sensitive to these properties and accordingly can serve as a probe for microscopic details.

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Section: B Coupling To Phononsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Lasing and transport in a multilevel double quantum dot system coupled to a microwave oscillator

2016

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“…Electrometry using RF-QPCs in mesoscopic junctions has been reported [12] [13]. There have been reports of phonon-photon coupling in mesoscopic junctions under the influence of microwave fields on double dot structures in QPC-like junctions [14]. There have also been observations of RF induced phonon emission in quantum junctions [15].…”

Section: Introductionmentioning

confidence: 99%

RF Field-Driven Electron Tunneling through Mesoscale Junctions

Bukhari¹

2017

JMP

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Preliminary results of a study are reported here investigating mesoscopic tunnel junctions irradiated with coherent low-intensity (−50 to −10 dB) pulsed microwave RF fields at moderately low (LN 2 ) temperatures. Quantum tunneling of electrons was observed through fabricated mesoscale gap junctions as a result of coherent irradiating fields at low temperatures around 77 -100 K. The tunneling current was seen as a result of applied microwave fields across the junctions, distinguishable from shot noise and resistance effects. The form of tunneling behavior does not lead to any conductance quantization effects which could manifest the junction as a Quantum Point Contact (QPC), hence it is surmised that the phenomenon is purely low intensity RF field-induced tunneling of electrons across the mesoscale junctions at low temperatures.

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“…Recently, it has been demonstrated that the conditions for population inversion can be met via a microwave Raman effect [5,6]. Theoretical work has indicated that similar effects should be possible for optically-driven excitons [7][8][9][10].…”

mentioning

confidence: 99%

Phonon-Assisted Population Inversion of a Single Quantum Dot

et al. 2015

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We demonstrate an approach to realize the population inversion of a single InGaAs/GaAs quantum dot, which is driven by a laser pulse tuned within the neutral exciton phonon sideband. The inversion is achieved by rapid thermalization of the optically dressed states via phonon-assisted relaxation. A maximum exciton population of 0.67 ± 0.06 is measured for a laser tuned 0.83 meV to higher energy and the phonon sideband is mapped using a two-color pump-probe technique. Our experiments reveal that, in accordance with theory, the phonon-bath provides additional functionality for an optically driven quantum dot qubit.It is a basic tenet of laser physics that a population inversion cannot be achieved through incoherent excitation of a two-level atom. At best, a laser pulse with duration longer than the coherence time T 2 can only drive the system to the transparency point where the populations of the upper and lower levels are equal [1]. However, if the two-level atom is coupled to a vibrational continuum, it has been predicted that inversion can be possible even in the incoherent regime through the interaction of the dressed states with the Boson bath [2]. Excitons in semiconductor quantum dots (QDs) form a near ideal system for investigating these effects, since their behavior approximates well to that of a two-level atom [3], while their coupling to the acoustic phonons in the crystal provides a mechanism to thermalize the dressed states.The possibility of creating population inversion in QDs through phonon coupling was first investigated for microwave-driven electrostatic quantum dots [4]. Recently, it has been demonstrated that the conditions for population inversion can be met via a microwave Raman effect [5,6]. Theoretical work has indicated that similar effects should be possible for optically-driven excitons [7][8][9][10]. The underlying mechanism is the coupling of the excitons to longitudinal acoustic (LA) phonons through the deformation potential [11], which generates sidebands in the excitonic spectra [12] that can also be observed in four-wave mixing [13] and resonance fluorescence experiments [14], as well as through off-resonant coupling of excitons to nano-cavities [15,16]. In a strong driving field regime evidence for phonon induced relaxation between optically dressed states is observed in the intensity damping of Rabi rotations [17][18][19], and more recently in adiabatic rapid passage experiments [20,21].In this letter we report a population inversion of the excitonic two-level system of a single InGaAs/GaAs QD under strong laser pumping at positive detuning with the driving laser to higher energy than the QD zero phonon transition. We compare the results to the theoretical predictions of Ref. [9]. The population inversion is achieved in an incoherent regime where the dephasing time is shorter than the laser pulse duration. Pump-probe measurements are presented, where the phonon-assisted population inversion is observed clearly as a gain-like dip in the photocurrent absorption spectrum. Furthermore...

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Raman phonon emission in a driven double quantum dot

Cited by 26 publications

References 33 publications

Lasing and transport in a multilevel double quantum dot system coupled to a microwave oscillator

Lasing and transport in a multilevel double quantum dot system coupled to a microwave oscillator

RF Field-Driven Electron Tunneling through Mesoscale Junctions

Phonon-Assisted Population Inversion of a Single Quantum Dot

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