Raman and morphology visualization in epitaxial graphene on 4H-SiC by Nitrogen or Argon ion irradiation

Zhao, Jin-Hua; Qin, Xiaoyu; Fu, Gang; Wang, Xuelin

doi:10.1016/j.nimb.2015.08.051

Cited by 6 publications

(2 citation statements)

References 26 publications

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“…Ion implantation on EG with 25 eV B and N ions showed an increase in resistance and a change in magnetoresistance from positive to negative [15]. Defect differences appeared at 200 keV N and Ar ion irradiation of epitaxial graphene, along with a decrease in corrugation [16]. Previously we showed that ion beam implantation (30 keV) and ion beam irradiation (100 MeV) using silver ions acts as a tool to increase sensing capacity of EG on SiC [17,18].…”

Section: Introductionmentioning

confidence: 83%

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

et al. 2020

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Modification of epitaxial graphene on silicon carbide (EG/SiC) was explored by ion implantation using 10 keV nitrogen ions. Fragments of monolayer graphene along with nanostructures were observed following nitrogen ion implantation. At the initial fluence, sp3 defects appeared in EG; higher fluences resulted in vacancy defects as well as in an increased defect density. The increased fluence created a decrease in the intensity of the prominent peak of SiC as well as of the overall relative Raman intensity. The X-ray photoelectron spectroscopy (XPS) showed a reduction of the peak intensity of graphitic carbon and silicon carbide as a result of ion implantation. The dopant concentration and level of defects could be controlled both in EG and SiC by the fluence. This provided an opportunity to explore EG/SiC as a platform using ion implantation to control defects, and to be applied for fabricating sensitive sensors and nanoelectronics devices with high performance.

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Section: Introductionmentioning

confidence: 83%

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

et al. 2020

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“…The epitaxial regrowth of different orientation SiC crystals in the ion-irradiation-induced amorphous layer had been widely investigated [ 14 , 15 , 16 , 17 , 18 ]. However, the surface morphology of ion-irradiated SiC could be changed with many surface features appearing after thermal annealing [ 19 , 20 ]. Surface cracking is one of these features, which has a significant influence on the properties of SiC [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing

Ran

Zhou

et al. 2017

Materials

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Single crystal 6H-SiC wafers with 4° off-axis [0001] orientation were irradiated with carbon ions and then annealed at 900 °C for different time periods. The microstructure and surface morphology of these samples were investigated by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Ion irradiation induced SiC amorphization, but the surface was smooth and did not have special structures. During the annealing process, the amorphous SiC was recrystallized to form columnar crystals that had a large amount of twin structures. The longer the annealing time was, the greater the amount of recrystallized SiC would be. The recrystallization volume fraction was accorded with the law of the Johnson–Mehl–Avrami equation. The surface morphology consisted of tiny pieces with an average width of approximately 30 nm in the annealed SiC. The volume shrinkage of irradiated SiC layer and the anisotropy of newly born crystals during annealing process produced internal stress and then induced not only a large number of dislocation walls in the non-irradiated layer but also the initiation and propagation of the cracks. The direction of dislocation walls was perpendicular to the growth direction of the columnar crystal. The longer the annealing time was, the larger the length and width of the formed crack would be. A quantitative model of the crack growth was provided to calculate the length and width of the cracks at a given annealing time.

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Study on the irradiation damage in Fe-based metallic glasses induced by Ne10+ ions

Suo

Zhang

Guan

et al. 2020

Fusion Engineering and Design

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Raman and morphology visualization in epitaxial graphene on 4H-SiC by Nitrogen or Argon ion irradiation

Cited by 6 publications

References 26 publications

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

Structural Modifications in Epitaxial Graphene on SiC Following 10 keV Nitrogen Ion Implantation

Recrystallization-Induced Surface Cracks of Carbon Ions Irradiated 6H-SiC after Annealing

Study on the irradiation damage in Fe-based metallic glasses induced by Ne10+ ions

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