1992
DOI: 10.1016/0921-5107(92)90084-m
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Raman and infrared studies of the structure of gallium sulphide based glasses

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Cited by 18 publications
(9 citation statements)
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“…In the Ga 2 S 3 -Bi 2 S 3 two-component system, all samples investigated for glass formation were devitrified by airquenching although the samples of the compositions 50GaS 3/2 • 50BiS 3/2 and 40GaS 3/2 • 60BiS 3/2 were partially vitrified by water-quenching. This partial glass-forming range in the two-component system is consistent with that previously reported [21,22]. However, in the threecomponent system with the addition of SnS, some samples with appropriate compositions were vitrified more easily; glasses were obtained in the compositional region ranging from 30 to 40 mol% of GaS 3/2 , 30 to 50 mol% of BiS 3/2 , and 10 to 30 mol% of SnS.…”
Section: Resultssupporting
confidence: 90%
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“…In the Ga 2 S 3 -Bi 2 S 3 two-component system, all samples investigated for glass formation were devitrified by airquenching although the samples of the compositions 50GaS 3/2 • 50BiS 3/2 and 40GaS 3/2 • 60BiS 3/2 were partially vitrified by water-quenching. This partial glass-forming range in the two-component system is consistent with that previously reported [21,22]. However, in the threecomponent system with the addition of SnS, some samples with appropriate compositions were vitrified more easily; glasses were obtained in the compositional region ranging from 30 to 40 mol% of GaS 3/2 , 30 to 50 mol% of BiS 3/2 , and 10 to 30 mol% of SnS.…”
Section: Resultssupporting
confidence: 90%
“…The gallium sulfide-containing glass systems reported to date are classified into two groups [21]; one is a group represented by the Ga-Ge-S glass system [22,24] and the other is a group represented by the Ga-La-S glass system [18,19]. The former is characterized by a glass composition, in which a sulfide other than Ga 2 S 3 is a main component that forms the glass network predominantly, and Ga 2 S 3 is incorporated into the network.…”
Section: Discussionmentioning
confidence: 99%
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“…The spectra were collected on a Lab RAM Aramis Horiba Jobin Yvom spectrometer using a HeNe laser source with a 0.03 filter with a 20 s exposure time. For compounds 1 – 3 , sharp peaks have been found in the range of 300–400 cm –1 which can be assigned as different stretching modes of Ga/ M –S bonds in the corner-shared (Ga/ M )­S 4 tetrahedral unit . The peaks at lower frequency range are due to Na–S bonds …”
Section: Experimental Sectionmentioning
confidence: 99%