Raman Analysis of Zn_1-xMg_xSe Layers Grown on GaAs and ZnTe Substrates

Abstract

A study of the Raman scattering in Zn 1 -x Mgx Se (0 _ < x < 0.4) epilayers grown by molecular beam epitaxy on (100) GaAs and (111)m ZnTe substrates has been performed. Two kinds of longitudinal optical phonon modes (LOzn-Se and LOΜ g -Se ) were observed under excitation of the Ar+ and Kr+ laser lines at room temperature, whose frequencies and intensities depend characteristically on the Mg content.