This work deals with the study of photoluminescence properties of ZnxMg1-xSe epilayers grown by molecular beam epitaxy on (001) GaAs and (111) ZnTe substrates and ZnxMg1-xSe 1ayers obtained by thermal diffusion of Mg into ZnSe single crystals. Luminescence spectra of Zn x Mg1x Se layers are dominated by blue and violet emission bands with maxima positioned in the range of photon energies: 3.05-3.28 eV, 2.88-3.04 eV, 2.81 eV and 2.705 eV, depending on preparation conditions. In some samples the blue luminescence is observed up to room temperature.
Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p+ silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions. PACS numbers: 78.30. Hv, There has been a considerable interest in the physical properties of porous silicon prepared by anodization method [1][2][3][4][5][6]. In particular, porous silicon layers are attractive for the possible efficient light-emitting applications in the visible region. It opens the door for silicon as a possible material for optoelectronic applications. In the present time the basic requirement for the preparation of porous silicon layers is to obtain a good quality, stable layer on Si subStrate emitting efficient luminescence.In this paper the Raman scattering (RS), reflectivity (R), photoluminescence (PL) and photoluminescence excitation (PLE) measurements of the porous silicon layers prepared on (001) p/p+ silicon epitaxial wafers by anodization method are presented.
This work deals with the study of the photoluminescence and reflectivity properties of ZnxMg1-xSe epilayers grown by molecular beam epitaxy on (001)GaAs and (111)ZnTe substrates. The photoluminescence spectra of Zn x Mg 1x Se layers grown on GaAs and ZnTe substrates are dkinated by blue emission bands. The energetical positions and relative intensities of the bands depend on Mg contents in the epilayers. The shift of the maxima of blue emission toward higher photon energies and a simultaneous steep increase in the linewidth with an increase in Mg concentratioii are observed. A small amount of Mg added to ZnSe leads to a sharp increase in the linewidth from 2 meV in pure ZnSe layer grown on GaAs substrate to about 180 meV in Zn0.78 Μg0.22 Se.
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