Radioactive probe atoms in semiconductors

Wichert, Th.

doi:10.1007/bf02150173

Cited by 9 publications

(1 citation statement)

References 44 publications

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“…However, a major part of the activity is focused on the investigation of defects and impurities in semiconductors such as Si, Ge, III-V or II-VI compounds. Amongst the main topics of investigation are implantation-induced lattice damage and its annealing behaviour, the lattice site of the implanted ion, the interaction between impurities or impurities and intrinsic defects, the electronic and optical properties of the implanted species and the identification of defects and impurities [36][37][38][39][40][41].…”

Section: Introductionmentioning

confidence: 99%

Exploring solid state physics properties with radioactive isotopes

Forkel-Wirth

1999

Rep. Prog. Phys.

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Radioactive atoms have been used in solid state physics for many years. Established nuclear techniques such as Mößbauer spectroscopy, perturbed angular correlation, β-NMR and emission channelling have now been joined by new and successful tracer techniques like radioactive deep level transient spectroscopy, capacitance voltage measurements, Hall-effect measurements or photoluminescence spectroscopy. Numerous radioactive species, ranging from 8 Li to 213 Fr, are employed to attack problems involved with defects or impurities in metals, semiconductors and superconductors.This paper aims to give an idea of the potential of modern 'radioactive solid state physics' by briefly explaining the techniques used and describing some typical experiments.

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Section: Introductionmentioning

confidence: 99%

Exploring solid state physics properties with radioactive isotopes

Forkel-Wirth

1999

Rep. Prog. Phys.

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Pairing between Radioactive Solutes and Point‐Defects in Semiconductors

Wichert

1997

Ber Bunsenges Phys Chem

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The study of solute point‐defect interactions in crystals is performed on an atomic scale by employing radioactive solutes as local observers. Thereby, the presence of a point‐defect next to the solute atom becomes observable via the altered electronic charge distribution about the solute, giving rise to a defect‐specific electric field gradient. Using the perturbed γγ angular correlation technique, this electric field gradient is detected via the hyperfine interaction occurring at the site of the nucleus of the radioactive atom. The sensitivity to solute point‐defect pairs is typically in the order of 1016cm–3. Several properties of these pairs, such as their chemical nature and thermodynamical behaviour are discussed. The point‐defects addressed in this paper are intrinsic, such as lattice vacancies, and extrinsic, such as substitutional and interstitial impurity atoms. Results for the elemental semiconductor Si and different II‐VI compound semiconductors will be discussed.

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Applications of radioactive ion beams to solid-state physics

Deicher¹

2003

Exotic Nuclei and Atomic Masses

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Radioactive probe atoms in semiconductors

Cited by 9 publications

References 44 publications

Exploring solid state physics properties with radioactive isotopes

Exploring solid state physics properties with radioactive isotopes

Pairing between Radioactive Solutes and Point‐Defects in Semiconductors

Applications of radioactive ion beams to solid-state physics

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