Radio Frequency and Linearity Performance of Transistors Using High-Purity Semiconducting Carbon Nanotubes

Abstract

This paper reports the radio frequency (RF) and linearity performance of transistors using high-purity semiconducting carbon nanotubes. High-density, uniform semiconducting nanotube networks are deposited at wafer scale using our APTES-assisted nanotube deposition technique, and RF transistors with channel lengths down to 500 nm are fabricated. We report on transistors exhibiting a cutoff frequency (f(t)) of 5 GHz and with maximum oscillation frequency (f(max)) of 1.5 GHz. Besides the cutoff frequency, the other important figure of merit for the RF transistors is the device linearity. For the first time, we report carbon nanotube RF transistor linearity metrics up to 1 GHz. Without the use of active probes to provide the high impedance termination, the measurement bandwidth is therefore not limited, and the linearity measurements can be conducted at the frequencies where the transistors are intended to be operating. We conclude that semiconducting nanotube-based transistors are potentially promising building blocks for highly linear RF electronics and circuit applications.

Probing molecular interactions on carbon nanotube surfaces using surface plasmon resonance sensors

“…Very high carrier mobility together with nanoscale dimension makes carbon nanotubes and graphene promising candidates for high performance electronics applications. 1 Besides unique electronic properties, the delocalized orbital has a strong tendency to adsorb aromatic molecules via p-electronic interactions. The strong non-covalent interactions between the graphitic surface and organic molecules provide a unique template for supramolecular chemistry 2,3 and sensing applications.…”

A simple drain current model for single-walled carbon nanotube network thin-film transistors

“…CNT networks have been explored as an alternative solution for transistor channels. [4][5][6][7][8][9][10][11][12] Although CNT network thin-film transistors (TFTs) are outperformed by individual CNT FETs, they provide a simple and low-cost fabrication method with "writing" transistors by an inkjet printer. 7 Small-scaled integrated circuits with p-channel configuration 11 as well as an complementary inverter 5 have been successfully fabricated.…”

Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes

“…T he extraordinary electrical properties [1][2][3] of semiconducting single-walled carbon nanotubes (s-SWNTs) make them uniquely attractive for use in logic transistors/circuits [4][5][6][7][8][9][10] , radiofrequency (RF) transistors [11][12][13][14][15][16] , optoelectronic devices [17][18][19] and sensors [20][21][22] . The required horizontally aligned array configurations in SWNTs are possible through chemical vapour deposition (CVD)-based growth on quartz substrates 23,24 .…”