Radio frequency analog electronics based on carbon nanotube transistors

Kocabaş, Coşkun; Kim, Hoon Sik; Banks, Tony; Rogers, John A.; Pesetski, Aaron A.; Baumgardner, James E.; Krishnaswamy, S. V.; Zhang, Hong

doi:10.1073/pnas.0709734105

Cited by 183 publications

(127 citation statements)

References 26 publications

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“…extensively in transistors, amplifiers, and even fully integrated transistor radios [15][16][17][18]. In addition, arrays provide a natural path toward large scale integration, in which the spatial position and electronic properties of any given tube in the array are not critically important; the large numbers of tubes that contribute to operation of a given device yield statistical averaging effects that can provide good device-to-device uniformity in properties.…”

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confidence: 99%

Theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes

Rotkin

et al. 2010

Nano Res.

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We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube and array devices. We show that for as-grown array diodes, the rectification ratio, defined by the maximum-to-minimum-current-ratio, is low due to the presence of metallic-single-walled nanotube (SWNT) shunts. These tubes can be eliminated in a single voltage sweep resulting in a high rectification array device. Further analysis also shows that the channel resistance, and not the intrinsic nanotube diode properties, limits the rectification in devices with channel length up to 10 μm. KEYWORDSSchottky diodes, aligned arrays, single-walled carbon nanotubesSince the earliest days of work on semiconductor devices, diodes have played critically important roles. Theories of p-n Schottky diodes [1, 2] laid the foundations for understanding bi-polar transistor operation and contact phenomena at the metal/semiconductor interface. Even though the diode itself is not a main element of modern digital electronics, the physics of the diode structure is essential for many applications, including in optoelectronics [3]. Nanoscale diodes have been already demonstrated with carbon-based nanomaterials, such as graphene and individual nanotubes [4][5][6][7][8][9][10][11][12][13][14]. The work presented here focuses on diode structures made of parallel nanotube arrays, their rectification properties, and the physics of their electronic transport. The array format is advantageous because they deliver much larger currents than a single-tube device and have less noise, enabling them to operate at high frequency as we have demonstrated Nano Res (2010) 3: 444-451

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Theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes

Rotkin

et al. 2010

Nano Res.

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“…209,210 Another approach is to align unsorted solution-processed CNTs using dielectrophoresis, leading to an input impedance of 50 Ω up to 20 GHz. 211 However, the presence of metallic CNTs in these studies significantly degrades the performance by decreasing the output impedance (and thus the gain) of the devices.…”

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Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

et al. 2013

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In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in selected applications, issues surrounding structural inhomogeneity and imprecise assembly have impeded robust and reliable implementation of carbon nanomaterials in widespread technologies. However, with recent advances in synthesis, sorting, and assembly techniques, carbon nanomaterials are experiencing renewed interest as the 2 basis of numerous scalable technologies. Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples. Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. In this manner, this article will provide guidance to future application developers and also articulate the remaining research challenges confronting this field.Deep Jariwala is currently working as a graduate student under supervision of Prof. Mark

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“…T he extraordinary electrical properties [1][2][3] of semiconducting single-walled carbon nanotubes (s-SWNTs) make them uniquely attractive for use in logic transistors/circuits [4][5][6][7][8][9][10] , radiofrequency (RF) transistors [11][12][13][14][15][16] , optoelectronic devices [17][18][19] and sensors [20][21][22] . The required horizontally aligned array configurations in SWNTs are possible through chemical vapour deposition (CVD)-based growth on quartz substrates 23,24 .…”

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confidence: 99%

Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes

et al. 2014

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Recent progress in the field of single-walled carbon nanotubes (SWNTs) significantly enhances the potential for practical use of this remarkable class of material in advanced electronic and sensor devices. One of the most daunting challenges is in creating large-area, perfectly aligned arrays of purely semiconducting SWNTs (s-SWNTs). Here we introduce a simple, scalable, large-area scheme that achieves this goal through microwave irradiation of aligned SWNTs grown on quartz substrates. Microstrip dipole antennas of low work-function metals concentrate the microwaves and selectively couple them into only the metallic SWNTs (m-SWNTs). The result allows for complete removal of all m-SWNTs, as revealed through systematic experimental and computational studies of the process. As one demonstration of the effectiveness, implementing this method on large arrays consisting of B20,000 SWNTs completely removes all of the m-SWNTs (B7,000) to yield a purity of s-SWNTs that corresponds, quantitatively, to at least to 99.9925% and likely significantly higher.

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Radio frequency analog electronics based on carbon nanotube transistors

Cited by 183 publications

References 26 publications

Theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes

Theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes

Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing

Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes

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