Radiative recombination of Al+-implanted alpha-sic p-n structures

Гусев, В. М.; Demakov, K. D.; Stolyarova, V. G.

doi:10.1080/00337578308217833

Cited by 7 publications

(3 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For a review of ion implantation in silicon carbide see Davis, et al 1991;Ivanov & Chelnokov 1992;and Wongchotigul 1995. Ion implantation has been used for: 1) pn junction formation (Anikin, et al 1984;Ramungul, et al 1995;Xie, et al 1995;Wang, et al 1995;Palmour, et al 1995), 2) light emitting diode fabrication (Gusev, et al 1983), 3) highly doped contact layers (Spieb, et al 1995;Slater, et al 1995), (4) field effect transistors channels Slater, et al 1995) and (5) device isolation and termination (Nadella & Capono 1997).…”

Section: Ion Implantation In Sicmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

View full text Add to dashboard Cite

Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

show abstract

Section: Ion Implantation In Sicmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

View full text Add to dashboard Cite

show abstract

“…One of the most well-known surface dependent ALD growth concerns metal oxide deposition on hydroxyl-terminated and hydrogen-terminated surfaces. As an example, Gusev E. et al reported that HfO2 ALD nucleates promptly on hydroxyl-terminated Si surfaces whereas initial inhibition is observed on hydrogen-terminated Si surfaces (2).…”

Section: Introductionmentioning

confidence: 99%

Area-Selective Deposition by a Combination of Organic Film Passivation and Atomic Layer Deposition

Pasquali

Gendt

Armini³

2019

ECS Trans.

View full text Add to dashboard Cite

Area-Selective Deposition (ASD) has the potential to enable self-aligned patterning schemes, which are implemented in the effort of keeping pace with the more and more challenging downscaling of the integrated circuit components. ASD can be achieved by exploiting surface-sensitive deposition techniques, such as Atomic Layer Deposition (ALD). However, the inherent selectivity of ALD is confined to very few ALD cycles (very thin films). Self-Assembled Monolayers (SAMs) are evaluated as a metal passivation coating to extend the ASD inhibition window. We present a successful strategy to achieve the selective deposition of Al oxide on Cu/SiO2 patterned substrate down to 50 nm half-pitch (HP) lines. We exploit the selective chemisorption of 1-octadecylthiol (ODT) on Cu to confine Al2O3 deposition on Si oxide. A study of ODT deposition on Cu allows to determine the best deposition conditions, which enable the demonstration of ASD of 6 nm Al2O3 film at relevant nano-scale dimensions. Selectivity toward Cu is demonstrated through the absence of Al signal in energy dispersive X-ray spectroscopy.

show abstract

“…With the rapid progress of microelectronics industry, metal oxide semiconductor (MOS) devices have been scaled down to the low sub-100 nm level. 1 In order to meet the performance requirements of future generations, The development of high-k materials, such as HfO 2 , ZrO 2 and TiO 2 has recently been the focus of intensive efforts to replace SiO 2 or silicon oxide-/nitride-based systems for the application of capacitor dielectrics, gate oxide, and interpoly dielectrics(IPD) [1][2][3] It is recently reported that HfO 2 films with a higher dielectric constant than one reported previously were presented through phase transition engineering by the addition of Al 2 O 3 . The higher dielectric constant was due to the stabilization of a metastable tetragonal phase and the change in preferred orientation.…”

Section: Introductionmentioning

confidence: 99%

Effects of Film Thickness and Preferred Orientation on the Dieletric Constants of Hf-Aluminate Films Deposited by PEALD

et al. 2008

View full text Add to dashboard Cite

The thickness changes in Hf aluminate films deposited by PEALD were investigated by modifying the process sequence. The conventional supercycle of Hf aluminate film is composed of two groups of subcycles allocated to deposit Al 2 O 3 and HfO 2 films. The dielectric constants of these thin films decrease with decreasing film thickness. This decrease originates to a changing preferred orientation from (200) to (111). Using the modified supercycle which has a periodically addition of small dose of Al 2 O 3 in HfO 2 thin film, the HfO 2 film was transformed from (111) preferred orientation to (200) preferred orientation. As a result of preferred orientation change, the dielectric constant of films increased up to 22.5

show abstract

Radiative recombination of Al+-implanted alpha-sic p-n structures

Cited by 7 publications

References 1 publication

High-Temperature Electronics in Europe

High-Temperature Electronics in Europe

Area-Selective Deposition by a Combination of Organic Film Passivation and Atomic Layer Deposition

Effects of Film Thickness and Preferred Orientation on the Dieletric Constants of Hf-Aluminate Films Deposited by PEALD

Contact Info

Product

Resources

About