Radiative Recombination Mechanisms of Large InAs/GaAs Quantum Dots

Martini, S.; Marques, Angelo Eduardo Battistini; Marques, Marcelo; Quivy, A. A.; Teles, L. K.

doi:10.4236/wjcmp.2011.14024

Cited by 9 publications

(5 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In addition to that we see that the intensity of EL spectra decrease with increasing the applied electric field which may be attributed to the decrease in energy of the electron which proportional to the second power degree of the electric field [13] [16] [17]. Also we see that the quantum numbers (n c , l c , m c ) have a significant effects on photoluminescence peak energy at fixed value of applied electric field (e z ) which can be explained as Ref [10] where the authors concluded that to have more than one excitons by dots the probability must be considered, and must include other factors as relaxation time, radiative recombination rate, scattering, and others.…”

Section: Resultsmentioning

confidence: 64%

“…The authors of [10] studied the mechanisms of radiative recombination of large InAs/GaAs quantum dots, the large InAs/GaAs quantum dots optical properties were investigated by low-temperature photoluminescence versus excitation-power density. They concluded that to have more than one exciton by Journal of Applied Mathematics and Physics dots the probability must be considered, and we must revise the usual equation to correctly describe the origin of the recombination and must include other factors as relaxation time, radiative recombination rate, scattering, and others.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

External Parameters Affecting on the Photoluminescence of InAs Spherical Layer Quantum Dot

Elias¹

2021

JAMP

View full text Add to dashboard Cite

Spherical layer quantum dots (SLQDs) attract a great deal of importance, and have various optoelectronics applications due to their outstanding optical and electrical properties. The photoluminescence (PL) and the electroluminescence (EL) spectra of InAs (SLQDs) were investigated theoretically under the presence of external parameters (pressure, temperature, electric field). Existing of both the temperature and the applied electric field lead to a significant decrease in photoluminescence peak energy (red-shift), while an increase existed in presence of applied hydrostatic pressure (blue-shift). Also with increasing the quantum azimuthal number the photoluminescence peak energy increase. In addition, we found no effect on the band shape of the luminescence as a result of existing such parameters. The study indicates the importance of such parameters as fitting parameters for photoluminescence spectra.

show abstract

Section: Resultsmentioning

confidence: 64%

Section: Introductionmentioning

confidence: 99%

External Parameters Affecting on the Photoluminescence of InAs Spherical Layer Quantum Dot

Elias¹

2021

JAMP

View full text Add to dashboard Cite

show abstract

“…In this groups, they correspond to the condition where dominant carrier recombination mechanism is radiative (m ~ 1), mixture of radiative and nonradiative (associate with defects) (1 <m< 2), or nonradiative dominant (m ~ 2) (Hasbullah et al 2009). In other study, Martini et al (2011) reported that, in a double logarithmic scale, the integrated PL intensity increases linearly with the increasing excitation power density and can be described by the relation, 2where is the integrated PL intensity; and is the excitation power density (Jin et al 1997). The exponent α depends on the radiative recombination mechanisms and η is the coefficient related to the PL efficiency of the QDs and includes several effects as capture, absorption, ionization and recombination of excitons.…”

Section: Power Dependence Of Plmentioning

confidence: 99%

Temperature and Power Dependence of Photoluminescence in PBS Quantum Dots Nanoparticles

Zaini¹,

Kamarudin²,

Liew³

et al. 2019

JSM

View full text Add to dashboard Cite

In this study, the synthesis and the effect of temperature and power excitation towards photoluminescence (PL) emission of colloidal PbS quantum dots (QDs) were reported. Water soluble PbS QDs capped with a mixture of 1-thioglycerol (TGL) and dithioglycerol (DTG) was synthesized via colloidal chemistry method at room temperature. The PL emission of PbS QDs was investigated under temperature range from 10 K to 300 K and we found that the PL emission blue-shifted when the temperature is increased. From high resolution transmission electron microscopy (HRTEM), the average size of PbS core QDs is determined to be 6 nm and the integrated PL intensity (IPL) versus excitation power density shows the recombination of electrons and holes occur efficiently at low and high temperature for the PbS QDs. Full width half maximum (FWHM) shows a gradual broadening with the increasing temperature due to the interaction of charge carriers with phonons.

show abstract

“…In this way, TL is one of a large family of luminescence phenomena [1,2]. The light emission from silicon quantum dots is an active research area because of its potential applications in the silicon-based optoelectronic devices [5][6][7][8]. The efficiency of the silicon light emitting devices can be increased with the help of various mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Thermoluminescence from Silicon Quantum Dots in the Two Traps-One Recombination Center Model

et al. 2017

View full text Add to dashboard Cite

A model of the first and general order kinetics describing the thermoluminescence (TL) from silicon quantum dots consisting of two active electron trap levels and one recombination center is proposed. The two trap levels are located at different trap depths beneath the edge of the conduction band. The rate equations corresponding to each trap level allow us to numerically simulate the variation of the concentration of electrons in the two traps and the TL intensity as a function of the temperature for quantum dots 2-8 nm in diameter. It is shown that the intensity increases with decreasing in the dot size, indicating that the quantum confinement effect enhances the radiative recombination rate. The two peaks of the intensity correspond to the two different active electron trap levels. With an increase in the dot size, the peaks of the intensity corresponding to the deepest trap shift to the high temperature region. The variation of the concentration of electrons in the traps is given, and this result bridges the experimental gap, where the TL glow curves are generated, and the variation of the concentration of electrons in traps is unknown.

show abstract

Radiative Recombination Mechanisms of Large InAs/GaAs Quantum Dots

Abstract: ABSTRACT

Cited by 9 publications

References 26 publications

External Parameters Affecting on the Photoluminescence of InAs Spherical Layer Quantum Dot

External Parameters Affecting on the Photoluminescence of InAs Spherical Layer Quantum Dot

Temperature and Power Dependence of Photoluminescence in PBS Quantum Dots Nanoparticles

Thermoluminescence from Silicon Quantum Dots in the Two Traps-One Recombination Center Model

Contact Info

Product

Resources

About