Radiative recombination in short-period a-Si/SiO2 superlattices

Zayats, Anatoly V.; Repeyev, Yu.A.; Nikogosyan, David N.; Vinogradov, E. A.

doi:10.1016/0022-2313(92)90037-a

Cited by 9 publications

(2 citation statements)

References 10 publications

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“…The photoluminescence spectra were recorded using 20-ps pulses from a tunable parametric oscillator consisting of two DKDP crystals pumped by the second harmonic of the YAG:Nd 3+ -laser radiation [5]. The output radiation wavelength could be continuously tuned from 370 to 1890 nm.…”

Section: Pl Setupmentioning

confidence: 99%

Influence of photoexcitation depth on luminescence spectra of bulk GaAs single crystals: application to defect structure characterization

Yuryev¹,

Калинушкин²,

Zayats³

et al. 2011

Preprint

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The results of investigation of bulk GaAs photoluminescence are presented taken from near-surface layers of different thicknesses using for excitation the light with the wavelengths which are close but some greater than the excitonic absorption resonances (so-called "bulk" photoexcitation). Only the excitonic and band-edge luminescence is seen under the interband excitation, while under the "bulk" excitation, the spectra are much more informative. The interband excited spectra of all the samples investigated in the present work are practically identical, whereas the bulk excited PL spectra are different for different samples and excitation depths and provide the information on the deep-level point defect composition of the bulk materials.

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Section: Pl Setupmentioning

confidence: 99%

Influence of photoexcitation depth on luminescence spectra of bulk GaAs single crystals: application to defect structure characterization

Yuryev¹,

Калинушкин²,

Zayats³

et al. 2011

Preprint

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“…The fabrication of Si/SiO 2 QWs has been an attractive area in process technology of Si-based light-emitting devices in last few decades. Various techniques are developed to synthesize the Si/SiO 2 nanostructured films-molecular beam epitaxy (MBE) [32][33][34][35][36][37], plasma-enhanced chemical vapor deposition (PECVD) [38][39][40][41][42][43][44][45][46][47][48][49], magnetron sputtering [50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65], electrochemical dissolution in electrolytes, ion implantation, and others. In this chapter, we investigate the growth of amorphous Si/SiO 2 QWs employing an ultrahigh vacuum (UHV) radio frequency (RF) magnetron sputtering (MS) system.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured Si/SiO2 Quantum Wells

Takeuchi¹,

Horíkoshi²

2019

Nanostructures in Energy Generation, Transmission and Storage

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The motivation for developing light-emitting devices on an indirect transition semiconductor such as silicon has been widely discussed for Si/SiO 2 nanostructures. In this chapter, we report on the fabrication of Si/SiO 2 quantum-confined amorphous nanostructured films and their optical properties. The Si/SiO 2 nanostructures comprising amorphous Si, SiO 2 , and Si/SiO 2 multilayers are grown using ultrahigh vacuum radio frequency magnetron sputtering. Optical absorption coefficients of the Si/SiO 2 nanostructures are evaluated with regard to tentative integrated Si thicknesses. Optical energy band gaps of the Si/SiO 2 multilayer films are in accordance with the effective mass theory and described as E 0 = 1.61 + 0.75d −2 eV at the Si layer-integrated thicknesses ranging from 0.5 to 6 nm. Quantum confinement effects in the Si/SiO 2 nanostructures are inferred from optical transmittance and reflectance spectra. The rapid-thermal-annealed Si/SiO 2 multilayer films demonstrate the intensified photoluminescence at ~1.45 eV due to the formation of nanocrystalline silicon. The temperature dependence of the nanocrystalline luminescence intensity shows the nonmonotonous behavior which is interpreted invoking the Kapoor model.

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Optically stimulated intersubband absorption in undoped amorphous Si/SiO₂ qiantum well

Keller

Zayats

Vinogradov

1994

Adv Material for Optics Elec

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lntersubband absorption has been observed in undoped amorphous multiple-quantum-well (MQW) strucctures under interband excitation. The transitions take place between the first and second subbands of the conduction band and involve non-equilibrium electrons excited into the first subband by optical pumping. The absorption band FWHM of 0.1 eV is much larger than for crystalline MQWs, a fact which reflects the relaxation of the electron momentum conservation in the QW plane. The high joint density of states and oscillator strength for the intersubband transitions in amorphous QWs allow one to observe the absorption at low electron concentrations (Ne = 1013 cm -3) in the ground conduction subband.

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Radiative recombination in short-period a-Si/SiO2 superlattices

Cited by 9 publications

References 10 publications

Influence of photoexcitation depth on luminescence spectra of bulk GaAs single crystals: application to defect structure characterization

Influence of photoexcitation depth on luminescence spectra of bulk GaAs single crystals: application to defect structure characterization

Nanostructured Si/SiO2 Quantum Wells

Optically stimulated intersubband absorption in undoped amorphous Si/SiO₂ qiantum well

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Radiative recombination in short-period a-Si/SiO2 superlattices

Cited by 9 publications

References 10 publications

Influence of photoexcitation depth on luminescence spectra of bulk GaAs single crystals: application to defect structure characterization

Influence of photoexcitation depth on luminescence spectra of bulk GaAs single crystals: application to defect structure characterization

Nanostructured Si/SiO2 Quantum Wells

Optically stimulated intersubband absorption in undoped amorphous Si/SiO2 qiantum well

Contact Info

Product

Resources

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Optically stimulated intersubband absorption in undoped amorphous Si/SiO₂ qiantum well