RADIATIVE RECOMBINATION IN GaP <i>p-n</i> AND TUNNEL JUNCTIONS

Logan, R. A.; Gershenzon, M.; Trumbore, F. A.; White, H. G.

doi:10.1063/1.1754190

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Comparisons Of the Three Diode Classes2

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1966

1973

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Cited by 13 publications

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“…Thus radiative recombination proceeds outside the space charge region (or at shallow centers within it), whereas a good part of the current recombines in the space charge region. This is not much different from previous findings for GaP diodes (10).…”

Section: Comparisons Of the Three Diode Classescontrasting

confidence: 94%

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Gallium Phosphide Double-Epitaxial Diodes

Ladany

1969

J. Electrochem. Soc.

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The external quantum efficiency of red EL emission in normalGaP diodes is studied as a function of doping in the p layer. A standardized procedure is used, consisting of liquid phase epitaxial growth of an n layer, followed by similar growth of the p layer. It is found that efficiencies up to 1.4% result from optimizing the Zn and O additions to the p melt, but that efficiencies as high as 3.4% can be obtained if the p melts are compensated by the addition of Te. Arguments are presented showing that a residual donor, probably sulfur, accounts for compensation effects in diodes made by an earlier process. Some other factors which may influence the efficiency are also discussed.

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Section: Comparisons Of the Three Diode Classescontrasting

confidence: 94%

“…This is not much different from previous findings for GaP diodes (10). The dependence of the total light intensity on bias has the form exp (eV/nkT) with n ~ 1, whereas the current dependence on bias is of the same form with n = 1.7.…”

Section: Comparisons Of the Three Diode Classescontrasting

confidence: 65%