Gallium Phosphide Double-Epitaxial Diodes

Abstract

The external quantum efficiency of red EL emission in normalGaP diodes is studied as a function of doping in the p layer. A standardized procedure is used, consisting of liquid phase epitaxial growth of an n layer, followed by similar growth of the p layer. It is found that efficiencies up to 1.4% result from optimizing the Zn and O additions to the p melt, but that efficiencies as high as 3.4% can be obtained if the p melts are compensated by the addition of Te. Arguments are presented showing that a residual donor, probably sulfur, accounts for compensation effects in diodes made by an earlier process. Some other factors which may influence the efficiency are also discussed.

GaP RED ELECTROLUMINESCENT DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 7%

“…7 x 10 17 cm-3 as deduced from the extent of compensation of Zn acceptors when 0 is added. 11 This value being a factor of 2 higher than the maximum 0 concentration determined for SG crystals 5 suggests that the kinetics of LPE growth provide a more favorable distribu-tion coefficient for 0 incorporation and thus may allow for a higher concentration of Zn-o complexes which are the radiative centers for the red luminescence. i2 , 13 We also note that Auger mechanisms 14 ,15 and other nonradiative paths involving free holes are expected to be minimized in our structures owing to the low net acceptor concentration in the p-Iayers.…”

Coprecipitation of Ga[sub 2]O[sub 3] in the Liquid-Phase Epitaxial Growth of GaP

“…Manuscript submitted Aug. 9, 1971; revised manuscript received Dec. 13, 1971. This was RNP 250 presented at the Atlantic City Meeting of the Society, Oct. [4][5][6][7][8] 1970.…”

“…However, the doping requirements for maximizing the efficiency by means of O additions (in the form of Ga203) are less well understood. In particular, in open-tube LPE "best" devices have been reported for 0.15 (7) and 0.4 a/o O (6). In sealed-tube growth (SG or LPE) maximum efficiencies have been found over a surprisingly wide range of O additions, specifically between 0.03 (2) and 1.05 a/o O (5).…”

“…In the case of solution growth (SG) (2,3) and sealed-tube liquid-ph.ase epitaxy (LPE) (4,5), the concentration of Zn added to the Ga-GaP solutions by different investigators to maximize the electroluminescent or photoluminescent efficiency varies from 0.03 (5) to 0.14 a/o (atom per cent (4). Because of vaporization losses the Zn additions in open-tube LPE (6, 7) are higher [0.15 (7) to 0.20 a/o (6)]. At these Zn concentrations in the Ga-GaP solutions the resulting crystals are expected to contain (8) Zn at concentrations less than 10 TM cm -3 (at a typical growth temperature of ~1040~ hence, the deleterious effect of Auger recombination (9) on efficiency is avoided.…”

Crystallization—Part I - Transport Phenomena of Nucleation and Crystal Growth

“…GaAszPi_" (11 Ga,27Ga,157Ga) SnTe Sulfide films GaN (85Ga) Te GaP (1 IGa,92Ga,162Ga) Ti Ge (4Ga,5Ga,47Ga,54Ga,67Ga,79Ga,TiO,TiN 84Ga,106Ga,164Ga,193Ga) Th on W( 100)…”