Radiative Recombination in Cadmium Sulfide

Colbow, Konrad; Yuen, K.

doi:10.1139/p72-207

Cited by 20 publications

(4 citation statements)

References 14 publications

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“…Following refs − , the emission line shape is given by where contains the terms involved in changing variables from atomic spacing, R , to energy, E , as well as normalization constants. Colbow et al showed that this condition requires to scale linearly with the minority impurity concentration, i.e. the acceptor concentration, , in n-type nanowires.…”

Section: Optical Characterizationmentioning

confidence: 99%

“…Because the DAP transitions responsible for green and red emission saturated at approximately the same rate (similar k values), it was assumed that the radiative transition coefficient, , was equivalent between the two processes. Because both sets of data were analyzed from the same spectra, the only parameter within ζ that differed between the fits was , which is linear with and therefore ζ. Therefore, the relative acceptor concentration was found from the result , giving .…”

Section: Optical Characterizationmentioning

confidence: 99%

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Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

et al. 2019

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Characterizing point defects that produce deep states in nanostructures is imperative when designing next-generation electronic and optoelectronic devices. Light emission and carrier transport properties are strongly influenced by the energy position and concentration of such states. The primary objective of this work is to fingerprint the electronic structure by characterizing the deep levels using a combined optical and electronic characterization, considering ZnSe nanowires as an example. Specifically, we use low temperature photoluminescence spectroscopy to identify the dominant recombination mechanisms and determine the total defect concentration. The carrier concentration and mobility are then calculated from electron transport measurements using single nanowire field effect transistors, and the measured experimental data were used to construct a model describing the types, energies, and ionized fraction of defects and calculate the deviation from stoichiometry. This metrology is hence demonstrated to provide an unambiguous means to determine a material’s electronic structure.

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Section: Optical Characterizationmentioning

confidence: 99%

Section: Optical Characterizationmentioning

confidence: 99%

Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

et al. 2019

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“…The theoretical concept of donor-acceptor (DA) pair recombination in semiconductors was developed almost 60 years ago [1][2][3][4][5]. Since then DA pairs were systematically studied in different compound semiconductors like GaP, GaN, CdS and others.…”

Section: Introductionmentioning

confidence: 99%

Broad-band photoluminescence of donor–acceptor pairs in tetrahedrite Cu₁₀Cd₂Sb₄S₁₃ microcrystals

Krustok¹,

Raadik²,

Kaupmees³

et al. 2020

J. Phys. D: Appl. Phys.

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We present temperature and laser power dependent photoluminescence (PL) study of Cd substituted tetrahedrite Cu10Cd2Sb4S13 microcrystals. At T = 10 K a single broad, asymmetric and structureless PL band was detected at about 1.08 eV. The temperature and laser power dependencies indicate that the properties of PL emission can be explained by the distant donor–acceptor (DA) pair model, where a donor defect has a depth of E D ≈ 30 meV and an acceptor defect E A = 88 ± 6 meV. It was shown that the shape of the DA pair band could be effectively described using statistical distribution of donor–acceptor defects, recombination probability of DA pairs with different spatial separation, relatively strong electron–phonon coupling and occupation probabilities of donor and acceptor defects. At T = 200 K the DA pair recombination gradually starts to transform into conduction band-acceptor recombination.

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“…Though an initial idea of excited bound exciton states was pursued, a consistent explanation for these observations could not yet been found. Additional bound exciton st,ates have never been found in this energy region except when the samples were doped definitely with phosphorus or iodine [4, 51 and silver [6].…”

Section: Introductionmentioning

confidence: 99%

Forbidden luminescence and resonance Raman scattering of bound exciton states in CdS

Baumert

Broser

Gutowski

et al. 1983

Physica Status Solidi (b)

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A series of six energy levels is found a t energy distances 2.5, 3.8, 4.7, 6.1, 7.0, and 8.3 meV on the high energy side of the neutral-acceptor bound exciton I, in CdS. They appear in the emission and absorption spectra of some freshly grownvirgin crystals andof some crystals damaged by laser-irradistion. Resonance Raman scattering (RRS) establishes the new levelsas intermediate states inevery high quality crystal. These levels are interpreted as excited states of the bound exciton I,. The direct radiative recombination is forbidden due to parity selection rules. These selection rules are removed in symmetry disturbed crystals, a t high excitation intensities, or by recombination with phonon participation. In consequence they are detected as forbidden luminescence, as LO phonon replica, or as 1-LO-and 2-LO-Raman lines.The2-LO scattering cross section of the energy region of bound excitons in CdS is determined. Auf der hochenergetischen Seite des an einen neutralen Akzeptor gebundenen Exzitons I, in CdS werden sechs neue Zustande in einem energetischen Abstand von 2,5; 3,8; 4,7; 6,l; 7,O und 8,3 meV zur I, gefunden. Sie erscheinen sowohl in Emissions-als auch in Absorptionsspektren von einigen frisch geziichteten und einigen durch Laserbestrahlung stark geschadigten CdS-Kristallen. Resonante Ramen-Streuung erzeugt diese neuen Niveaus als Zwischenzustiinde in beliebigen, ungestiirten CdS-Kristallen. Sie werden interpretiert als angeregte Zustande des gebundenen Exzitons I,. Der strahlende Zerfall des Exzitons in diesen Zustiinden ist aufgrund von Paritatsauswahlregeln verboten. Diese Auswahlregeln werden aufgehoben in symmetriegestorten Kristallen, durch hohe Anregungsintensitaten und durch Phononenbeteiligung. Daher werden die Niveans sichtbar als verbotene Lumineszenz sowie als LO-Phononenreplika bzw. 1-LOund 2-LO-Ramanlinien. I m Energiebereich der gebundenen Exzitonen in CdS werden die 2-LO Ramanstreuquerschnitte bestimmt. l ) StraRe des 17. Jnni 112, 1000 Berlin (West) 12.

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Radiative Recombination in Cadmium Sulfide

Cited by 20 publications

References 14 publications

Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

Broad-band photoluminescence of donor–acceptor pairs in tetrahedrite Cu₁₀Cd₂Sb₄S₁₃ microcrystals

Forbidden luminescence and resonance Raman scattering of bound exciton states in CdS

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Radiative Recombination in Cadmium Sulfide

Cited by 20 publications

References 14 publications

Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

Fingerprinting Electronic Structure in Nanomaterials: A Methodology Illustrated by ZnSe Nanowires

Broad-band photoluminescence of donor–acceptor pairs in tetrahedrite Cu10Cd2Sb4S13 microcrystals

Forbidden luminescence and resonance Raman scattering of bound exciton states in CdS

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Broad-band photoluminescence of donor–acceptor pairs in tetrahedrite Cu₁₀Cd₂Sb₄S₁₃ microcrystals