Radiations hardening of a high voltage IC technology (BCDMOS)

Desko, J.C.; Darwish, M.; Dolly, M.C.; Goodwin, C.A.; Dawes, W. R.; Titus, J.L.

doi:10.1109/23.101234

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Single Event Upsets (Seus): Conventional Upset Mechanisms1

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Cited by 6 publications

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“…The resultant SER raise was attributed to a new source, protons from solar events and trapped protons in the Van Allen belts (Wyatt et al 1979). The 1980s where characterised by extensive research and development of SEU hardened electronics (Desko et al 1990;Rockett 1988;Weaver et al 1987) and research on the fundamental SEU mechanisms, mostly on memory circuitry (Adams and Gelman 1984;Blake and Mandel 1986), since SEUs in combinational logic were rare (May et al 1984). In 1984 SEUs induced by atmospheric neutrons were predicted in avionics for the first time (Silberberg et al 1984).…”

Section: Single Event Upsets (Seus): Conventional Upset Mechanismsmentioning

confidence: 99%