Radiation-Tolerant p-Type SnO Thin-Film Transistors

Jeong, Ha-Yun; Kwon, Soo-Hun; Joo, Hyo‐Jun; Shin, Mingyu; Jeong, Hwan-Seok; Kim, Dae-Hwan; Kwon, Hyuck‐In

doi:10.1109/led.2019.2914252

Cited by 11 publications

(6 citation statements)

References 29 publications

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“…[33] Proton irradiation on the SnO-based p-type TFT exhibits similar immune performance to a low radiation dose of 10 12 p cm −2 . [119] Therefore, the p-type SnO-based TFTs have tremendous potential in the implemented complementary-logic circuits for harsh environments. [119] Physically enhancement of the WBGs-based electronics to high dose radiation is further analyzed by material engineering, such as the doping technology to create hybrid material.…”

Section: Oxide Semiconductors-based Tftsmentioning

confidence: 99%

“…[119] Therefore, the p-type SnO-based TFTs have tremendous potential in the implemented complementary-logic circuits for harsh environments. [119] Physically enhancement of the WBGs-based electronics to high dose radiation is further analyzed by material engineering, such as the doping technology to create hybrid material. Amorphous zinc tin oxide (a-ZTO) device was studied by B.…”

Section: Oxide Semiconductors-based Tftsmentioning

confidence: 99%

“…[ 119 ] Therefore, the p ‐type SnO‐based TFTs have tremendous potential in the implemented complementary‐logic circuits for harsh environments. [ 119 ]…”

Section: Radiation Effect On Thin Films Transistor (Tft)mentioning

confidence: 99%

“…[ 33 ] Proton irradiation on the SnO‐based p ‐type TFT exhibits similar immune performance to a low radiation dose of 10 12 p cm −2 . [ 119 ] Therefore, the p ‐type SnO‐based TFTs have tremendous potential in the implemented complementary‐logic circuits for harsh environments. [ 119 ]…”

Section: Radiation Effect On Thin Films Transistor (Tft)mentioning

confidence: 99%

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Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

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These energetic particles, such as electrons, protons, neutrons, X-rays, or gamma rays, induced damage in materials (used in electronic devices) through total ionization and displacement, [4] which would affect the reliability of the electronic devices. [5][6][7] Electronics failure occurs in harsh and inaccessible environments through various paths, such as electromagnetic waves, nuclear reactions, and high-frequency communications systems. Therefore, the radiationhardened requirements of the deployed electronic technology depend on the specific high-energy photons and particles in the radiation environment. For example, Mars exploration requires a special proton anti-radiation in electronics. At the same time, the safety supervision and inspection of the contaminated nuclear area are suggested to be equipped with high resilience towards the alpha, beta, and gamma rays. The development of radiation-hard electric circuits over the years has led researchers to consider the application of functional anti-irradiation material to devices. The current focus is on developing complementary metal-oxide semiconductors (CMOS) with wide bandgap semiconductors (WBGs), which are well suited to large-area aerospace applications. [8][9][10] As shown in Figure 1, a notable material class of WBGs can be listed as metal oxides (MOS), transition-metal dichalcogenides (TMDs), silicon carbide, gallium nitride, and others. WBGs materials contribute robust properties under harsh conditions due to their strong electronic compliance, high-temperature competence, and strong atomic bond energy. [11][12][13][14][15][16] They have been proposed as favorable materials for aerospace and other radiation-hardened applications. Generally, the bandgap in the semiconductor reflects the extra energy that a valence electron must access to become a free electron. Its large bandgap of more than 3 eV guarantees inherent reliability in the semiconductors, providing transparency for the low-energy photons. The large, spherical nsorbitals in the conduction band (CB) of MOS also play a critical role in high dopability for hosting a high density of electrons, leading to the remarkably tolerance to various radiation fluences. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Understanding the apparent immunity of the WBGs to various radiation environments and radiation-hard electronic engineering would be critical for pushing the technology further and understanding its limitations. Efforts to address these issues have been underway over the past two decades. Substantial progress has also been made in designing radiation-hard thin films transistors (TFTs) with ZnO, Ga 2 O 3 , In 2 O 3 , SnO 2 , IGZO, SiC, GaN, and many other WBGs, The aspiration of electronic technologies that are resistant to high-energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post-processing after designing, making their structures more complex than the standard systems. Thus, unique de...

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Section: Oxide Semiconductors-based Tftsmentioning

confidence: 99%

Section: Oxide Semiconductors-based Tftsmentioning

confidence: 99%

“…[ 119 ] Therefore, the p ‐type SnO‐based TFTs have tremendous potential in the implemented complementary‐logic circuits for harsh environments. [ 119 ]…”

Section: Radiation Effect On Thin Films Transistor (Tft)mentioning

confidence: 99%

Section: Radiation Effect On Thin Films Transistor (Tft)mentioning

confidence: 99%

See 2 more Smart Citations

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

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“…Yatsu et al [37] reported good stability of p-type SnO x TFTs with slight negative shift of transfer curves up to 100 Gy of X-Ray irradiation. Jeong et al [38] also reported excellent radiation hardness of SnO TFTs under 5 MeV proton irradiation. However, Sharma et al [39] demonstrated that high-energy (150 MeV) gold ion (Au 4þ ) irradiation degrades the crystallinity and surface roughness of SnO films (not TFTs) at higher fluence level (5 Â 10 12 ion cm À2 ).…”

mentioning

confidence: 93%

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature

Al-Mamun

Rasel

Wolfe

et al. 2023

Physica Status Solidi (a)

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The study investigates the mitigation of radiation damage on p‐type SnO thin film transistors (TFTs) with a fast, room temperature annealing process. Atomic layer deposition was utilized to fabricate bottom‐gate TFTs of high‐quality p‐type SnO layers. After 2.8 MeV Au4+ irradiation at a fluence level of 5.2x1012 ions/cm2, the output drain current and on/off current ratio (Ion/Ioff) decreased by more than one order of magnitude, field‐effect mobility (μFE) reduced more than four times, and sub‐threshold swing (SS) increased more than 4 times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high resolution micro‐Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). We demonstrate a technique to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low duty cycle high density pulsed current. At a pulsed current density of 4.0x105 A/cm2, we observed approximately four times increase in Ion/Ioff, 41% increase in μFE, and 20% decrease in the SS of the irradiated TFTs suggesting effectiveness of the new annealing technique.This article is protected by copyright. All rights reserved.

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Oxide TFTs and Their Application to X‐Ray Imaging

Street¹

2022

Amorphous Oxide Semiconductors

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Radiation-Tolerant p-Type SnO Thin-Film Transistors

Cited by 11 publications

References 29 publications

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature

Oxide TFTs and Their Application to X‐Ray Imaging

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