Radiation tolerance of single-sided silicon microstrips

Holmes-Siedle, Andrew; Robbins, Mark S.; Watts, S.; Allport, P. P.; Brenner, R.; Moser, H. G.; Roe, S.; Straver, J.; Weilhammer, P.; Chochula, P.; Mikulec, I.; Moszczynski, S.; Turała, M.; Dąbrowski, W.; Gryboś, P.; Idzik, M.; Loukas, D.; Μισιάκος, Κ.; Siotis, I.; Zachariadou, K.; Dulinski, W.; Michele, J.; Schaeffer, M.; Turchetta, R.; Booth, P.S.L.; Richardson, J.; Smith, N. A.; Gill, K.; Hall, G.; Sachdeva, R.; Sotthibandhu, S.; Vitè, Davide; Wheadon, R.; Arrighi, C.; Delpierre, P.; Habrard, M.C.; Clémens, J. C.; Mouthuy, T.; Avset, B.S.; Evensen, L.; Hanneborg, A.; Hansen, Thor-Erik; Bisello, D.; Giraldo, A.; Paccagnella, A.; Kurchaninov, L. L.; Spiriti, E.; Apsimon, R.; Giubellino, P.; Ramello, L.; Silva, W.L. Prado da; Krammer, M.; Schuster, M.

doi:10.1016/0168-9002(94)90188-0

Cited by 40 publications

(3 citation statements)

References 15 publications

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“…The results are shown in Figure 7. Similar measurement b y groups working towards the development of detectors for the SSC [8] and the LHC [7] are in agreement with our ndings.…”

Section: Radiation Hardness Studiessupporting

confidence: 82%

The CDF SVX-II upgrade for the Tevatron run II

Bortoletto

1997

Nuclear Instruments and Methods in Physics Research Section A:

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A microstrip silicon detector SVX II has been proposed for the upgrade of CDF to be installed in 1999 for Run II of the Tevatron. Three barrels of ve l a y ers of doublesided silicon microstrip detectors will cover the interaction region. A description of the project status will be presented. Emphasis will be given to the R&D program for silicon sensors which includes capacitance minimization, the study of coupling capacitor integrity, the operation of the detectors in conjunction with the SVXH and SVX2 readout chips in two beam tests and the determination of the detectors performance deterioration due to radiation damage.

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“…The results are shown in Figure 7. Similar measurement b y groups working towards the development of detectors for the SSC [8] and the LHC [7] are in agreement with our ndings.…”

Section: Radiation Hardness Studiessupporting

confidence: 82%

The CDF SVX-II upgrade for the Tevatron run II

Bortoletto

1997

Nuclear Instruments and Methods in Physics Research Section A:

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“…However major further changes were discovered in the doping concentration during room temperature annealing [7], with additional acceptor creation causing the material to become more p-type. Measurements made over the last year have demonstrated that this can be controlled by maintaining the detectors at temperatures below 10°C (figs.1 and 2) [11, 12,13]. These studies continue.…”

Section: Prototype Fabricationmentioning

confidence: 92%

Detector radiation damage studies for a silicon microstrip tracker at LHC

Hall

1994

IEEE Trans. Nucl. Sci.

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The RD20 collaboration is undertaking systematic studies of the radiation hardness of prototype detectors in order to construct silicon microstrip tracking detectors at the LHC. Results from irradiations on pside and n-side strips, both fabricated on n-type silicon are presented. ResultsThe principal conclusions from the work to date are summarised below [ 1,2,7,12,131.Leakage currents have been measured with neutrons, protans and gammas and are known to be proportional to par&le fluence, with volume current density = damage consraq x fluence. The neutron damage constant is well established fmm our own work and others [7-111 to be -7~1 0 -l~ A.cm-l for

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“…The effects of bulk damage in silicon detectors have been extensively investigated and recent results may be found in [ 10,11,12,13]. Electrically observable effects include an increase in leakage current due to the reduction in minority carrier [14].…”

Section: B Radiation Effects In Siliconmentioning

confidence: 99%

Proton irradiation of various resistivity silicon detectors

Bates¹,

Dezillie²,

Furetta³

et al.

Proceedings of the Third European Conference on Radiation and Its Effects on Components and Systems

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Future high energy physics experiments at CERN's Large Hadron Collider will use high precision silicon detectors for tracking purposes. The hadronic component of the radiation received threa1.ens the lifetime of these detectors and it is vital to choose the silicon starting material to maximise the performance and lifetime. Ion-implanted silicon detectors with various initial resistivities and germanium concentrations, have been irradiated with high energy protons up to a fluence of loi4The change in leakage current and full depletion voltage have been studied both as a function of fluence and of time after irradiation. Measurements were made up to 100 days post-irradiation at room temperature and then using heating techniques to accelerate processes up to the equivalent of over 10 years at room temperature. The leakage-current damage constant is shown to be independent of the starting material while the conduction type inversion point and the long-term annealing of the depletion voltage are sensitive to the initial resistivity and impurity concentrations.0-7803-3093-5/96$5.000 1996 487

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Radiation tolerance of single-sided silicon microstrips

Cited by 40 publications

References 15 publications

The CDF SVX-II upgrade for the Tevatron run II

The CDF SVX-II upgrade for the Tevatron run II

Detector radiation damage studies for a silicon microstrip tracker at LHC

Proton irradiation of various resistivity silicon detectors

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