Proton irradiation of various resistivity silicon detectors

Abstract

Future high energy physics experiments at CERN's Large Hadron Collider will use high precision silicon detectors for tracking purposes. The hadronic component of the radiation received threa1.ens the lifetime of these detectors and it is vital to choose the silicon starting material to maximise the performance and lifetime. Ion-implanted silicon detectors with various initial resistivities and germanium concentrations, have been irradiated with high energy protons up to a fluence of loi4The change in leakage current and full depletion voltage have been studied both as a function of fluence and of time after irradiation. Measurements were made up to 100 days post-irradiation at room temperature and then using heating techniques to accelerate processes up to the equivalent of over 10 years at room temperature. The leakage-current damage constant is shown to be independent of the starting material while the conduction type inversion point and the long-term annealing of the depletion voltage are sensitive to the initial resistivity and impurity concentrations.0-7803-3093-5/96$5.000 1996 487

Measurement of the bulk leakage current of silicon sensors of the CMS Preshower after an integrated luminosity of 6.17 fb−1, at √s = 7 TeV

“…Sensors were irradiated to the expected fluences (and above) and their characteristics reevaluated. It was found that the leakage current increases linearly with the radiation and that the effective doping concentration changes with the creation of the acceptor centres and the removal of donors [4][5][6][7][8]. It was also found that these changes vary with time after the radiation damage occurs and that the time constants are a function of the temperature.…”