Radiation tolerance analysis of 4H-SiC PIN diode detectors for neutron irradiation

Gao, Runlong; Du, X.; Ma, Wuying; Sun, Bin; Ruan, Jinlu; Ouyang, Xiaolong; Li, H.; Chen, L.; Liu, L.Y.; Ouyang, Xiaoping

doi:10.1016/j.sna.2021.113241

Cited by 10 publications

(6 citation statements)

References 34 publications

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“…A wide interest in using 4H-SiC for radiation detection applications has been driving the development of semiconductor devices, such as 4H-SiC PiN diodes [13] or Metal-Oxide-Semiconductor (MOS) devices [14]. However, such devices will not be included ide-Semiconductor (MOS) devices [14].…”

Section: Polytype Sicmentioning

confidence: 99%

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Capan

2022

Electronics

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In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) structures, as significant progress has been achieved in radiation detection applications of SBDs in the last decade. Here, we present the recent advances at all key stages in the application of 4H-SiC SBDs as radiation detectors, namely: SBDs fabrication, electrical characterization of SBDs, and their radiation response. The main achievements are highlighted, and the main challenges are discussed.

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Section: Polytype Sicmentioning

confidence: 99%

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Capan

2022

Electronics

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“…There is a whole variety of 4H-SiC-based devices that are currently being used as radiation detectors. The most common are PiN diodes [ 21 ], metal-oxide-semiconductor (MOS) structures [ 22 , 23 ], and Schottky barrier diodes (SBDs) [ 16 , 17 , 18 ]. Even though the SBD is one of the simplest devices, it has many advantages, and it has been chosen as the preferred structure in many studies [ 24 ].…”

Section: 4h-sicmentioning

confidence: 99%

Wide-Bandgap Semiconductors for Radiation Detection: A Review

Capan

2024

Materials

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In this paper, an overview of wide-bandgap (WBG) semiconductors for radiation detection applications is given. The recent advancements in the fabrication of high-quality wafers have enabled remarkable WBG semiconductor device applications. The most common 4H-SiC, GaN, and β-Ga2O3 devices used for radiation detection are described. The 4H-SiC and GaN devices have already achieved exceptional results in the detection of alpha particles and neutrons, thermal neutrons in particular. While β-Ga2O3 devices have not yet reached the same level of technological maturity (compared to 4H-SiC and GaN), their current achievements for X-ray detection indicate great potential and promising prospects for future applications.

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“…A wide interest in using 4H-SiC for radiation detection applications has been driving the development of semiconductor devices such as 4H-SiC PiN diodes [16] or Metal-Oxide-Semiconductor (MOS) devices [13]. However, such devices will not be included in this review, as we will strictly focus on SBDs as one of the simplest and widely used radiation detectors.…”

Section: Polytypementioning

confidence: 99%

“…There is a whole variety of 4H-SiC-based devices that are currently being used as radiation detectors. The most common are PiN diodes [20], metal-oxide-semiconductor (MOS) structures [21,22], and Schottky barrier diodes (SBDs) [15,16,17]. Even though the SBD is one of the simplest devices, it has many advantages and it has been chosen as the preferred structure in many studies [23].…”

Section: H-sicmentioning

confidence: 99%

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Capan¹

2022

Preprint

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In this review paper, an overview of the application of n-type 4H-SiC Schottky barrier diodes (SBDs) as radiation detectors is given. We have chosen 4H-SiC SBDs among other semiconductor devices such as PiN diodes or metal-oxide-semiconductor (MOS) structures, as significant progress has been achieved in radiation detection applications of SBDs in the last decade. Here, we present the recent advances at all key stages in the application of 4H-SiC SBDs as radiation detectors, namely: SBDs fabrication, electrical characterization of SBDs, and their radiation response. Main achievements are highlighted, and main challenges are discussed.

show abstract

Radiation tolerance analysis of 4H-SiC PIN diode detectors for neutron irradiation

Cited by 10 publications

References 34 publications

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

Wide-Bandgap Semiconductors for Radiation Detection: A Review

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

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