“…Generally, in the case of ion implantation in YSZ (with e.g. Yb [25], Pt [26] or Cs [27,28]), post-implantation annealing leads to damage recovery (starting from 400°C to 800°C for Pt or Cs implantation, respectively). But in the particular case of inert gases, and especially He, the situation is different, since an increase of the disorder level is measured.…”