Radiation stability of AIII2BVI3semiconductors

Koshkin, V. M.; Gal'chinetskii, L. P.; Kulik, V. N.; Ulmanis, U.

doi:10.1080/00337577608233475

Cited by 16 publications

(7 citation statements)

References 3 publications

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“…4 The presence of stoichiometric vacancies in this class of material also leads to a loose crystal structure, which allows for anomalously high radiation stability by minimizing Frenkel pair production from incident radiation; parameters, such as charge carrier concentration, charge carrier mobility, and microhardness measured before and after irradiation showed little or no change. [5][6][7] As a result, such materials may also have potential as nuclear particle detectors for high energy physics or security applications.…”

Section: Introductionmentioning

confidence: 99%

Effect of vacancies on the structure and properties of Ga2(Se0.33Te0.67)3

Abdul-Jabbar

Forrest

Gronsky

et al. 2015

Journal of Applied Physics

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Ga 2 (Se 0.33 Te 0.67) 3 belongs to a family of materials with large intrinsic vacancy concentrations that are being actively studied due to their potential for diverse applications that include thermoelectrics and phase-change memory. In this article, the Ga 2 (Se 0.33 Te 0.67) 3 structure is investigated via synchrotron x-ray diffraction, electron microscopy, and x-ray absorption experiments. Diffraction and microscopy measurements showed that the extent of vacancy ordering in Ga 2 (Se 0.33 Te 0.67) 3 is highly dependent on thermal annealing. It is posited that stoichiometric vacancies play a role in local atomic distortions in Ga 2 (Se 0.33 Te 0.67) 3 (based on the fine structure signals in the collected x-ray absorption spectra). The effect of vacancy ordering on Ga 2 (Se 0.33 Te 0.67) 3 material properties is also examined through band gap and Hall effect measurements, which reveal that the Ga 2 (Se 0.33 Te 0.67) 3 band gap redshifts by 0.05 eV as the vacancies order and accompanied by gains in charge carrier mobility. The results serve as an encouraging example of altering material properties via intrinsic structural rearrangement as opposed to extrinsic means, such as doping.

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Section: Introductionmentioning

confidence: 99%

Effect of vacancies on the structure and properties of Ga2(Se0.33Te0.67)3

Abdul-Jabbar

Forrest

Gronsky

et al. 2015

Journal of Applied Physics

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“…Additional work on Ga 2 Te 3 has also shown it could be an attractive material for phase-change random access memory applications as it shows better data retention ability, low power consumption, and high dynamical electric switching ratios when compared to the more widely studied Ge 2 Sb 2 Te 5 4 . The presence of stoichiometric vacancies in this class of material also leads to a loose crystal structure, which allows for anomalously high radiation stability by minimizing Frenkel pair production from incident radiation; parameters such as charge carrier concentration, charge carrier mobility, and microhardness measured before and after irradiation showed little or no change [5][6][7] . As a result, such materials may also have potential as nuclear particle detectors for high energy physics or security applications.…”

Section: Introductionmentioning

confidence: 99%

Effect of stoichiometric vacancies on the structure and properties of the Ga2SeTe2 compound semiconductor

Abdul-Jabbar¹,

Forrest²,

Gronsky³

et al. 2015

Preprint

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Ga 2 SeTe 2 belongs to a family of materials with large intrinsic vacancy concentrations that are being actively studied due to their potential for diverse applications that include thermoelectrics and phase-change memory. In this article, the Ga 2 SeTe 2 structure is investigated via synchrotron x-ray diffraction, electron microscopy, and x-ray absorption experiments. Diffraction and microscopy measurements showed that the extent of vacancy ordering in Ga 2 SeTe 2 is highly dependent on thermal annealing.It is posited that stoichiometric vacancies play a role in local atomic distortions in Ga 2 SeTe 2 (based on the fine structure signals in the collected x-ray absorption spectra). The effect of vacancy ordering on Ga 2 SeTe 2 material properties is also examined through band gap and Hall effect measurements, which reveal that the Ga 2 SeTe 2 band gap redshifts by ≈0.05 eV as the vacancies order and accompanied by gains in charge carrier mobility. The results serve as an encouraging example of altering material properties via intrinsic structural rearrangement as opposed to extrinsic means such as doping.

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“…The electric, galvanomagnetic, optical, photoelectric and mechanical parameters of the semiconductor materials were proved not to change under the effects of relatively large doses of ionizing radiation (at least, up to 10 18 cm À2 g-quanta having energies from 1 to 300 MeV, fast electrons in the same energy range, and 10 18 cm À2 fast neutrons [1]). Theoretical investigations of the given phenomenon [2,3] have shown that in loose crystal lattices radiation-induced defects are instable and self-healing over time periods of the order of 10 À11 s. Radiation resources of the loose-lattice crystals are extraordinarily abundant, the predicted resources being unlimited for some of them. This remarkable property is defined exactly by the crystal structure rather than by electronic properties of crystals, occurring in semiconductors as well as in dielectrics [2] and metallic alloys [4] with loose lattices.…”

Section: Introductionmentioning

confidence: 99%

“…Theoretical investigations of the given phenomenon [2,3] have shown that in loose crystal lattices radiation-induced defects are instable and self-healing over time periods of the order of 10 À11 s. Radiation resources of the loose-lattice crystals are extraordinarily abundant, the predicted resources being unlimited for some of them. This remarkable property is defined exactly by the crystal structure rather than by electronic properties of crystals, occurring in semiconductors as well as in dielectrics [2] and metallic alloys [4] with loose lattices.…”

Section: Introductionmentioning

confidence: 99%